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參數(shù)資料
| 型號： | TSHF5210 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode in T-13/4 Package |
| 中文描述： | 高速紅外發(fā)光二極管在T - 13 / 4包 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 123K |
| 代理商： | TSHF5210 |
www.vishay.com
2
Document Number 81313
Rev. 1.1, 30-Oct-06
TSHF5210
Vishay Semiconductors
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Figure 1. Power Dissipation Limit vs. Ambient Temperature
20112
0
50
100
150
200
10
20 30 40 50 60 70
8
0 90
T
am
b
- Am
b
ient Temperat
u
re (°C)
0
100
P
V
w
e
W
)
R
thJA
= 270 K/
W
Figure 2. Forward Current Limit vs. Ambient Temperature
T
am
b
- Am
b
ient Temperat
u
re (°C)
20113
0
10
20
30
40
50
60
70
8
0
90 100
0
25
50
75
100
125
R
thJA
= 270 K/
W
I
F
w
a
u
r
Test condition
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
f
c
Min
Typ.
1.4
Max
1.6
Unit
V
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
2.3
V
Temp. Coefficient of V
F
Reverse Current
- 2.1
mV/K
10
μA
Junction Capacitance
125
pF
Radiant Intensity
68
140
340
mW/sr
1400
mW/sr
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
48
mW
- 0.35
%/K
± 10
890
deg
nm
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
40
nm
0.25
nm/K
30
ns
Fall Time
30
ns
Cut-Off Frequency
12
MHz
Virtual Source Diameter
3.7
mm
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