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參數(shù)資料
| 型號： | TPV8100B_D |
| 英文描述： | TPV8100B 470-860 MHz. 150 W. 28 V RF Power Transistor - Archived |
| 中文描述： | TPV8100B 470-860兆赫。 150布什28 V的RF功率晶體管-存檔 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 107K |
| 代理商： | TPV8100B_D |
A
A
Figure 1. Series Equivalent Input/Output Impedances
Input and Output impedances with circuit tuned for maximum linearity @ V
CC
= 28 V / I
CQ
= 2 x 50 mA / P
out
= 100 W
TPV8100B
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2 Adc, V
CE
= 10 Vdc)
h
FE
30
—
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2)
(V
CB
= 28 V, I
E
= 0, f = 1 MHz)
C
ob
—
44
—
pF
FUNCTIONAL TESTS IN CW (SOUND)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 V, P
out
= 100 W, I
CQ
= 2 x 50 mA, f = 860 MHz)
G
p
8.5
9.5
—
dB
Collector Efficiency
(V
CC
= 28 V, P
out
= 100 W, I
Q
= 2 x 50 mA, f = 860 MHz)
η
55
58
—
%
Output Power @ 1 dB Compression (P
ref
= 25 W)
(V
CC
= 28 V, I
CQ
= 2 x 50 mA, f = 860 MHz)
P
out
100
110
—
W
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Peak Output Power (synch.)
(V
CC
= 28 V, I
CQ
= 2 x 50 mA, f = 860 MHz)
P
out
125
135
—
W
Peak Output Power (synch.)
(V
CC
= 32 V, I
CQ
= 2 x 25 mA, f = 860 MHz)
P
out
150
160
—
W
Recommended Quiescent Current
I
CQ
—
—
2 x 0.3
A
NOTE:
2. Value of “C
ob
” is that of die only. It is not measurable in TPV8100B because of internal matching network.
f
(MHz)
Z
in
(Ohms)
Z
OL
*
(Ohms)
470
665
860
1.95 + j3.67
3.65 + j6.82
6.66 + j13.8
10.0 + j9.50
9.23 + j1.30
4.45 + j5.22
Z
OL
* = Conjugate of optimum load impedance into which
Z
OL
* =
the device operates at a given output power,
Z
OL
* =
voltage, current and frequency.
NOTE: Z
in
& Z
OL
* are given from base–to–base and
NOTE:
collector–to–collector respectively.
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