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參數(shù)資料
| 型號(hào)： | TPV8100B_D |
| 英文描述： | TPV8100B 470-860 MHz. 150 W. 28 V RF Power Transistor - Archived |
| 中文描述： | TPV8100B 470-860兆赫。 150布什28 V的RF功率晶體管-存檔 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | TPV8100B_D |
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A
1
TPV8100B
Motorola, Inc. 1994
The RF Line
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
To be used class AB for TV band IV and V.
Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CER
40
Vdc
Collector–Base Voltage
V
CBO
65
Vdc
Emitter–Base Voltage
V
EBO
4
Vdc
Collector–Current — Continuous
I
C
12
Adc
Total Device Dissipation @ 25
°
C Case
Derate above 25
°
C
P
D
215
1.25
Watts
W/
°
C
Operating Junction Temperature
T
J
200
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
0.8
°
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA, R
be
= 75
)
V
(BR)CER
30
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc)
V
(BR)EBO
4
—
—
Vdc
Collector–Base Breakdown Voltage
(I
E
= 20 mAdc)
V
(BR)CBO
65
—
—
Vdc
Collector–Emitter Leakage
(V
CE
= 28 V, R
be
= 75
)
I
CER
—
—
10
mA
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition.
Order this document
by TPV8100B/D
SEMICONDUCTOR TECHNICAL DATA
150 W, 470–860 MHz
NPN SILICON
RF POWER TRANSISTOR
CASE 398–03, STYLE 1
REV 6
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