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參數資料
| 型號： | TPS9103PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | POWER SUPPLY FOR GaAs POWER AMPLIFIERS |
| 中文描述： | 電源供應器的GaAs功率放大器 |
| 文件頁數： | 7/22頁 |
| 文件大小： | 341K |
| 代理商： | TPS9103PW |
TPS9103
POWER SUPPLY FOR GaAs POWER AMPLIFIERS
SLVS131A – OCTOBER 1995 – REVISED JULY 1996
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
NOM
MAX
UNIT
Input voltage, BATT_IN
3
9
V
Supply voltage, VCC, VDD
Output voltage, GATE_BIAS, VO
Continuous output current, GATE_BIAS
2.7
5.5
V
–2
–5
V
0
10
mA
Continuous output current, BATT_OUT
0
2
A
μ
F
kHz
Charge-pump capacitor value at C1+/C1–
0.33
External clock frequency, CLK
25
75
High-level input voltage, VIH
Low-level input voltage, VIL
Input current, II
Operating junction temperature, TJ
2
V
SW_EN, EN, OSC_EN, CLK
0.8
V
μ
A
°
C
–1
1
–25
125
electrical characteristics over recommended operating junction temperature range,
BATT_IN = 6 V, V
CC
= V
DD
= 3.3 V, I
O(BATT_OUT)
= 0.5 A, I
O(GATE_BIAS)
= 2 mA,
EN = OSC_EN = 0 V, SW_EN = V
CC
, C1 = 0.33
μ
F (unless otherwise noted)
charge pump
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output voltage
–3
–3.10
–3.3
V
Output resistance
95
high-side switch
PARAMETER
TEST CONDITIONS
MIN
TYP
135
MAX
180
UNIT
TA = 25
°
C
TA = –25
°
C to 85
°
C
TA = 25
°
C,
TA = –25
°
C to 85
°
C,
TA = 25
°
C,
TA = 85
°
C,
SW_EN from 0 to VCC
SW_EN from VCC to 0
Dran to source on state resistance
Dran-to-source on-state resistance
210
m
VI(BATT_IN) = 3 V
BATT_IN = 3 V
160
220
260
Leakage current
VI(BATT_IN) = 9 V,
VI(BATT_IN) = 9 V,
SW_EN = 0 V
1
μ
A
SW_EN = 0 V
10
Delay to high-level output
0.2
2
μ
s
μ
s
Delay to low-level output
0.9
2
oscillator
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Frequency
VCC = 2.7 V to 5.5 V
VCC = 2.7 V to 5.5 V
35
50
60
kHz
Duty cycle
40%
50%
60%
buffered clock output (BCLK)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Output resistance
10
High-level output voltage
I(BCLK) = 30 mA
VCC –0.3
Low-level output voltage
I(BCLK) = 30 mA
0.3
V
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