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| 型號： | TPS65171RHAR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 4 A SWITCHED CAPACITOR REGULATOR, 900 kHz SWITCHING FREQ-MAX, PQCC40 |
| 封裝： | 6 X 6 MM, GREEN, PLASTIC, MO-220VJJD-2, VQFN-40 |
| 文件頁數(shù)： | 13/46頁 |
| 文件大?。?/td> | 3644K |
| 代理商： | TPS65171RHAR |
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1
2
4
5
Z
f
R
C
p
=
HVS
FB1
R1 + R2||R 3
R1 + R2||R3
Vs
= V
= 1.24V
R2||R3
H VS
HV S
FB
R1
R2
R1
R2
R3 =
=
Vs
1
R2
R1
1
R2
R1
1.24V
V
1
-
-
-
÷
÷
è
è
SLVSA22A – OCTOBER 2009 – REVISED JANUARY 2010
www.ti.com
Compensation (Boost Converter)
The regulator loop can be compensated by adjusting the external components connected to the COMP pin. The
typical value of R4 = 33k
and C5 = 1nF is appropriate for most applications. Choosing R4 = 36k compensates
the boost converter more agressive and may cause instability for low output capacitance. The below formula
calculates at what frequency the resistor R4 increases the high frequency gain.
(6)
Gate Drive Pin (GD) and Isolation Switch Selection
The external isolation switch disconnects the boost converter once the device is turned off. If the boost converter
is enabled by EN2 and the delay time set by DLY1 passed by, the gate pin GD is pulled low by an internal 10 mA
current sink to minimize inrush current until the Gate-Source voltage is clamped at about VIN -6 V. An internal 10
k
pull up resistor to VIN is connected to GD to open the isolation switch if the Gate Drive is disabled. Using a
gate drain capacitor of typically 1 nF allows to increase the turn on time of the MOSFET for further inrush current
minimization. If the boost feedback voltage falls below 100mV for more than 1.4 ms, GD is pulled high and the
boost converter shuts down. The device does not recover automatically from shut down but Enable or
unvervoltage lockout must be toggled. Using this configuration allows to optimize the solution to specific
application requirement and different MOSFETs can be used. A standard P-Channel MOSFET with a current
rating close to the maximal used switch current of the boost converter is sufficient. The worst case power
dissipation of the isolation switch is the maximal used switch current x RDS(on) of the MOSFET. A standard
SOT23 package or similar is able to provide sufficient power dissipation.
Table 1. Isolation Switch Selection
COMPONENT SUPPLIER
CURRENT RATING
Vishay Siliconix Si3443CDV
4.7 A / 60 m
Vishay Siliconix Si3433DS
6 A / 38 m
International Rectifier IRLML6402
3.7 A / 65 m
Figure 25. GD Drive
High Voltage Stress Test (HVS)
The device has a high voltage stress test. This allows programming the boost converter output voltage VS higher
by the resistor connected to RHVS once HVS is pulled high. With HVS = high the RHVS pin is switched to GND.
The resistors R2 and R3 are connected parallel and therefore the overall resistance is reduced. This changes the
output voltage during the High Voltage Stress Test to a higher value:
(7)
(8)
With:
VsHVS = Boost converter output voltage with HVS high
20
Copyright 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): TPS65171
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