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參數(shù)資料
| 型號(hào)： | TPS65166RHAR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PQCC40 |
| 封裝： | 6 X 6 MM, GREEN, PLASTIC, M0-220VJJD-2, QFN-40 |
| 文件頁數(shù)： | 13/45頁 |
| 文件大?。?/td> | 3690K |
| 代理商： | TPS65166RHAR |
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Gate Drive Pin (GD) and Isolation Switch Selection
GD
Vin
6 V
I (GD)
Switch
R (GD)
High Voltage Stress Test (HVS)
HVS
FB1
R1 + R2||R 3
R1 + R2||R3
Vs
= V
= 1.24V
R2||R3
(7)
H VS
HV S
FB
R1
R2
R1
R2
R3 =
=
Vs
1
R2
R1
1
R2
R1
1.24V
V
1
-
-
-
÷
÷
è
è
(8)
Overvoltage Protection
SLVS976 – SEPTEMBER 2009.......................................................................................................................................................................................... www.ti.com
The external isolation switch disconnects the boost converter once the device is turned off. If the boost converter
is enabled by EN2 and the delay time set by DLY1 passed by, the gate pin GD is pulled low by an internal 10
A
current sink to minimize inrush current until the Gate-Source voltage is clamped at about VIN -6 V. An internal 10
k
pull up resistor to VIN is connected to GD to open the isolation switch if the Gate Drive is disabled. Using a
gate drain capacitor of typically 1 nF allows to increase the turn on time of the MOSFET for further inrush current
minimization. If the boost feedback voltage falls below 100mV for more than 1.4 ms, GD is pulled high and the
boost converter shuts down. The device does not recover automatically from shut down but Enable or
unvervoltage lockout must be toggled. Using this configuration allows to optimize the solution to specific
application requirement and different MOSFETs can be used. A standard P-Channel MOSFET with a current
rating close to the maximal used switch current of the boost converter is sufficient. The worst case power
dissipation of the isolation switch is the maximal used switch current x RDS(on) of the MOSFET. A standard
SOT23 package or similar is able to provide sufficient power dissipation.
Table 1. Isolation Switch Selection
COMPONENT SUPPLIER
CURRENT RATING
Vishay Siliconix Si3443CDV
4.7 A / 60 m
Vishay Siliconix Si3433DS
6 A / 38 m
International Rectifier IRLML6402
3.7 A / 65 m
Figure 25. GD Drive
The device has a high voltage stress test. This allows programming the boost converter output voltage VS higher
by the resistor connected to RHVS once HVS is pulled high. With HVS = high the RHVS pin is switched to GND.
The resistors R2 and R3 are connected parallel and therefore the overall resistance is reduced. This changes the
output voltage during the High Voltage Stress Test to a higher value:
With:
VsHVS = Boost converter output voltage with HVS high
The boost converter has two overvoltage protection mechanisms for the switch. Vs is monitored with an
overvoltage protection comparator on the OS pin and as soon as 19.5V typical is reached, the boost converter
stops switching. The converter also detects overvoltage if the feedback voltage at the feedback pin FB1 is 3%
above the typical regulation voltage of 1.24V, which stops switching. The converter starts switching again if the
output voltage falls below the overvoltage thresholds.
20
Copyright 2009, Texas Instruments Incorporated
Product Folder Link(s): TPS65166
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