參數(shù)資料
型號(hào)： TPS524
英文描述： PHOTOVOLTAIC CELL FOR THERMOPILE DETECTION
中文描述： 光伏電池的熱電堆檢測(cè)
文件頁數(shù)： 10/29頁
文件大?。?/td> 500K
代理商： TPS524
TPS5210
PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
SLVS171A – SEPTEMBER 1998 – REVISED MAY 1999
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating virtual junction temperature range,
V
CC
= 12 V, I
DRV
= 0 A (unless otherwise noted) (continued)
high-side VDS sensing
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gain
2
V/V
Initial accuracy
VHISENSE = 12 V,
Differential input to Vds sensing amp = 100 mV
5 V
≤
VIOUTLO
≤
13 V
VIOUT = 0.5 V,
VIOUTLO = 11.5 V
VIOUT = 0.05 V, VHISENSE = 12 V,
VIOUTLO = 12 V
VHISENSE = 11 V, RIOUT = 10 k
VHISENSE = 4.5 V, RIOUT = 10 k
VHISENSE = 3 V, RIOUT = 10 k
VLOSENSE = 11.9 V,
194
206
mV
IOUTLO
Sink current
250
nA
IOUT
Source current
VHISENSE = 12 V,
500
μ
A
IOUT
Sink current
50
μ
A
0
2
V
Output voltage swing
0
1.5
V
0
0.75
V
LOSENSE
High-level input voltage
VHISENSE= 4 5 V (see Note 3)
VHISENSE = 4.5 V (see Note 3)
2.85
V
Low-level input voltage
2.4
V
11.4 V
≤
VHISENSE
≤
12.6 V,
LOSENSE connected to HISENSE,
VHISENSE – VIOUTLO = 0.15 V
4.5 V
≤
VHISENSE
≤
5.5 V,
LOSENSE connected to HISENSE,
VHISENSE – VIOUTLO = 0.15 V
3 V
≤
VHISENSE
≤
3.6 V,
LOSENSE connected to HISENSE,
VHISENSE – VIOUTLO = 0.15 V
VHISENSE = 12.6 V to 3 V,
VHISENSE – VOUTLO = 100 mV
50
60
80
Sample/hold resistance
62
85
123
67
95
144
CMRR
69
75
dB
NOTE 3. This parameter is ensured by design and is not production tested.
inhibit
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Start threshold
1.9
2.1
2.35
V
Hysteresis
0.08
0.1
0.12
V
Stop threshold
1.85
V
overvoltage protection
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Overvoltage trip threshold
112
115
120
%VREF
mV
Hysteresis
See Note 3
10
NOTE 3: This parameter is ensured by design and is not production tested.
overcurrent protection
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OCP trip threshold
90
100
110
mV
Input bias current
100
nA
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