參數(shù)資料
型號(hào)： TPS40200MDREPG4
廠(chǎng)商： TEXAS INSTRUMENTS INC
元件分類(lèi)： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
封裝： GREEN, PLASTIC, MS-012AA, SOIC-8
文件頁(yè)數(shù)： 11/43頁(yè)
文件大?。?/td> 1069K
代理商： TPS40200MDREPG4
www.ti.com
l
S
pp
L
t
D
V
I
D
=
D
(
)
OUT
DSON
OUT
IN
I
R
DCR
V
+
-
=
D
(
)
mW
10
t
I
V
2
f
t
I
V
2
f
P
CHOFF
pk
IN
S
CHON
pk
IN
S
SW
=
+
÷
è
=
(10)
TH
IN
G
GD
CHON
V
R
Q
t
-
=
IN
G
GD
CHOFF
V
R
Q
t
=
mW
22
f
V
Q
P
S
GATE
G
GATE
=
=
mW
2
f
V
C
P
S
2
MAX
_
IN
OSS
COSS
=
=
SGLS371 – JANUARY 2007
Where:
RDSON = FET on-state resistance
DCR = Inductor dc resistance
D = Duty cycle
tS = Reciprocal of the switching frequency
Using the values in this example, the dc power loss is 129 mW. The remaining FET losses are:
P
SW – Power dissipated while switching the FET on and off
P
gate – Power dissipated driving the FET gate capacitance
P
COSS – Power switching the FET output capacitance
The total power dissipated by the FET is the sum of these contributions:
PFET = PSW + Pgate + PCOSS + PRDSON
The P-channel FET used in this application is an FDC654P, with the following characteristics:
trise = 13 × 10
–9
COSS = 83 × 10
–12
tfall = 6 × 10
–9
Qg = 9 nC
RDSON = 0.1
Vgate = 1.9 V
Qgd = 1.2 × 10
–9
Qgs = 1.0 × 10
–9
Using these device characteristics and the following formulas produces:
Where:
and
are the switching times for the power FET.
I
G = QG × fS = 2.7 mA is the gate current
The sum of the switching losses is 34 mW and is comparable to the 129-mW dc losses. At added expense, a
slightly larger FET would be better because the dc loss would drop and the ac losses would increase, with both
moving toward the optimum point of equal losses.
19
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