參數(shù)資料
型號： TPS40200MDREPG4
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
封裝： GREEN, PLASTIC, MS-012AA, SOIC-8
文件頁數(shù)： 10/43頁
文件大?。?/td> 1069K
代理商： TPS40200MDREPG4
www.ti.com
Component Selection
DSON
2
r
DC
R
I
P
= ms
(8)
2
1
2
pp
2
OUT
12
I
D
I
ú
ù
ê
é
÷
è
D
+
=
rms
(9)
SGLS371 – JANUARY 2007
EXAMPLE APPLICATIONS (continued)
Table 1. Design Parameters
SYMBOL
PARAMETER
TEST CONDITION
MIN
NOM
MAX
UNIT
VIN
Input voltage
8
12
16
V
VOUT
Output voltage
IOUT at 2.5 A
3.200
3.3
3.400(1)
V
Line regulation
±0.2% V
OUT
3.293
3.3
3.307
V
Load regulation
±0.2% V
OUT
3.293
3.3
3.307
V
VOUT
Output voltage
IOUT at 2.5 A
4.85
5
5.150(1)
V
Line regulation
±0.2% V
OUT
4.990
5
5.010
V
Load regulation
±0.2% V
OUT
4.990
5
5.010
V
VRIPPLE
Output ripple voltage
At maximum output current
60
mV
VOVER
Output overshoot
For 2.5-A load transient from 2.5 A to 0.25 A
100
mV
VUNDER
Output undershoot
For 2.5-A load transient from 0.25 A to 2.5 A
60
mV
IOUT
Output current
0.125
2.5
A
ISCP
Short-circuit current trip point
3.75
5.00
A
At nominal input voltage and maximum output
Efficiency
90
%
current
FS
Switching frequency
300
kHz
(1)
Set-point accuracy is dependent on external resistor tolerance and the IC reference voltage. Line and load regulation values are
referenced to the nominal design output voltage.
FET Selection Criteria
The maximum input voltage for this application is 16 V. Switching the inductor causes overshoot voltages
that can equal the input voltage. Since the RDSON of the FET rises with breakdown voltage, select a FET with
as low a breakdown voltage as possible. In this case, a 30-V FET was selected.
The selection of a power FET’s size requires knowing both the switching losses and dc losses in the
application. AC losses are all frequency dependent and directly related to device capacitances and device
size. Conversely, dc losses are inversely related to device size. The result is an optimum where the two
types of losses are equal. Since device size is proportional to RDSON, a starting point is to select a device
with an RDSON that results in a small loss of power relative to package thermal capability and overall
efficiency objectives.
In this application, the efficiency target is 90% and the output power 8.25 W. This gives a total power-loss
budget of 0.916 W. Total FET losses must be small, relative to this number.
The dc conduction loss in the FET is given by:
The rms current is given by:
18
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