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參數(shù)資料
| 型號： | TPS2812PW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | DUAL HIGH-SPEED MOSFET DRIVERS |
| 中文描述： | 雙高速MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 19/31頁 |
| 文件大?。?/td> | 663K |
| 代理商： | TPS2812PW |
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
19
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
Figures 33 through 47 illustrate the performance of the TPS2811 driving MOSFETs with clamped inductive
loads, similar to what is encountered in discontinuous-mode flyback converters. The MOSFETs that were tested
range in size from Hex-1 to Hex-4, although the TPS28xx family is only recommended for Hex-3 or below.
The test circuit is shown in Figure 32. The layout rules observed in building the test circuit also apply to real
applications. Decoupling capacitor C1 is a 0.1-
μ
F ceramic device, connected between V
CC
and GND of the
TPS2811, with short lead lengths. The connection between the driver output and the MOSFET gate, and
between GND and the MOSFET source, are as short as possible to minimize inductance. Ideally, GND of the
driver is connected directly to the MOSFET source. The tests were conducted with the pulse generator
frequency set very low to eliminate the need for heat sinking, and the duty cycle was set to turn off the MOSFET
when the drain current reached 50% of its rated value. The input voltage was adjusted to clamp the drain voltage
at 80% of its rating.
As shown, the driver is capable of driving each of the Hex-1 through Hex-3 MOSFETs to switch in 20 ns or less.
Even the Hex-4 is turned on in less than 20 ns. Figures 45, 46 and 47 show that paralleling the two drivers in
a package enhances the gate waveforms and improves the switching speed of the MOSFET. Generally, one
driver is capable of driving up to a Hex-4 size. The TPS2811 family is even capable of driving large MOSFETs
that have a low gate charge.
Regulator
R1
50
1
2
3
4
8
7
6
5
C1
0.1
μ
F
C2
4.7
μ
F
+
VDS
–
Q1
Current
Loop
L1
CR1
+
VI
VDS
VGS
VCC
Figure 32. TPS2811 Driving Hex-1 through Hex-4 Devices
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS2812PWR | 功能描述:功率驅(qū)動器IC Non-inv Dl H-S MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2812PWRG4 | 功能描述:功率驅(qū)動器IC Non-inv Dl H-S MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2813D | 功能描述:功率驅(qū)動器IC Dual 2A Hi Sp Comp RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2813DG4 | 功能描述:功率驅(qū)動器IC Dual 2A Hi Sp Comp RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TPS2813DR | 功能描述:功率驅(qū)動器IC Dual 2A Comp MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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