參數(shù)資料
型號(hào)： TPS2812PW
廠商： Texas Instruments, Inc.
英文描述： DUAL HIGH-SPEED MOSFET DRIVERS
中文描述： 雙高速M(fèi)OSFET驅(qū)動(dòng)器
文件頁(yè)數(shù)： 15/31頁(yè)
文件大?。?/td> 663K
代理商： TPS2812PW
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
matching and paralleling connections
Figures 21 and 22 show the delays for the rise and fall time of each channel. As can be seen on a 5-ns scale,
there is very little difference between the two channels at no load. Figures 23 and 24 show the difference
between the two channels for a 1-nF load on each output. There is a slight delay on the rising edge, but little
or no delay on the falling edge. As an example of extreme overload, Figures 25 and 26 show the difference
between the two channels, or two drivers in the package, each driving a 10-nF load. As would be expected, the
rise and fall times are significantly slowed down. Figures 28 and 29 show the effect of paralleling the two
channels and driving a 1-nF load. A noticeable improvement is evident in the rise and fall times of the output
waveforms. Finally, Figures 30 and 31 show the two drivers being paralleled to drive the 10-nF load and as could
be expected the waveforms are improved. In summary, the paralleling of the two drivers in a package enhances
the capability of the drivers to handle a larger load. Because of manufacturing tolerances, it is not recommended
to parallel drivers that are not in the same package.
Regulator
50
1
2
3
4
8
7
6
5
1 nF
Output
0.1
μ
F
4.7
μ
F
+
VCC
TPS2811
Figure 19. Test Circuit for Measuring Switching Characteristics
Regulator
50
1
2
3
4
8
7
6
5
CL(2)
CL(1)
Output 1
0.1
μ
F
4.7
μ
F
+
VCC
TPS2811
NOTE A: Input rise and fall times should be
≤
10 ns for accurate measurement of ac parameters.
Output 2
Figure 20. Test Circuit for Measuring Switching Characteristics with the Inputs Connected in Parallel
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS2812PWR 功能描述:功率驅(qū)動(dòng)器IC Non-inv Dl H-S MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2812PWRG4 功能描述:功率驅(qū)動(dòng)器IC Non-inv Dl H-S MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2813D 功能描述:功率驅(qū)動(dòng)器IC Dual 2A Hi Sp Comp RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2813DG4 功能描述:功率驅(qū)動(dòng)器IC Dual 2A Hi Sp Comp RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2813DR 功能描述:功率驅(qū)動(dòng)器IC Dual 2A Comp MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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