參數(shù)資料
型號(hào)： TPIC2101D
廠商： TEXAS INSTRUMENTS INC
元件分類： 運(yùn)動(dòng)控制電子
英文描述： BRUSH DC MOTOR CONTROLLER, 0.05 A, PDSO14
封裝： SOIC-14
文件頁(yè)數(shù)： 3/21頁(yè)
文件大?。?/td> 381K
代理商： TPIC2101D
TPIC2101
DC BRUSH MOTOR CONTROLLER
SLIS060 – OCTOBER 1995
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics, Vbat = 8 V to 16 V, TA = 25°C (continued)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
VID(low)
Input voltage, manual mode
low differential (low speed
command), MAN–AUTO
Vbat –3.5 V < MAN < Vbat+V
where “
” is the lesser of 2 V and 16 V –Vbat,
PWMout @ V(diff) = 0.2 V ≥ PWMout @
VI(DIFF)= 0 V
0.2
V
II(MAN)
II(AUTO)
Input currents, auto and
manual mode, MAN, AUTO
Vbat –3.5 V < MAN < Vbat +V
where “
” is the lesser of 2 V and 16 V –Vbat,
MAN – AUTO = 0 V to 2 V,
R(css) = 27.5 k to GND
1.70
2
2.30
mA
II(MANRATIO)
Input current, manual mode
matching ratio, MAN, AUTO
Vbat –3.5 V < MAN < Vbat +V
where “
” is the lesser of 2 V and 16 V –Vbat,
MAN – AUTO = 0 V to 2 V,
Rcss = 27.5 k to GND
–7
7
%
II(MAN(a))
Input current, man terminal
auto mode, MAN
Auto mode,
MAN = 2.2 V
5
10
15
A
II(MANQ)
Input current, man terminal
sleep mode, MAN
Sleep state,
MAN = 2.2 V
5
10
15
A
V(CCS)
Constant current sink voltage
regulation, CCS
Auto or Man mode,
I(CCS) = –100 A
2.58
2.78
2.92
V
V(OV)
Over voltage shutdown, Vbat
Vbat rising from 16 V,
INT = 1 V,
Detect I(INT) > 100 A
17
18.5
20
V
Vhys(OV)
Hysteresis, over voltage, Vbat
Vbat rising from 20.1 V, INT = 1 V,
Detect I(INT) < 100 A
0.5
0.8
0.99
V
VIT-(UVLO)
Under voltage shutdown
negative going threshold
voltage, Vbat
MAN = Vbat,
Vbat falling from 9 V,
Detect AREF < 2.5 V
7
7.5
8
V
VIT+(UVHI)
Under voltage shutdown
positive going threshold
voltage, Vbat
MAN = Vbat,Vbat rising from 6.9 V,
Detect AREF > 2.5 V
8
8.5
9
V
Vhys(UV)
Hysteresis, under voltage, Vbat V(UVHI) – V(UVLO)
0.5
1
V
VOH(GD)
High level output voltage, gate
IGD = –50 mA,
INT = 4.5 V,
Run state
Vbat –3
Vbat
V
VOH(GD)
gg , g
drive, GD
IGD = –2 mA,
INT = 4.5 V,
Run state
Vbat – 0.2
Vbat
V
VOL(GD)
Low level output voltage, gate
Run state,
IGR = 50 mA,
VI(INT) = 0 V,
VCOSC = 1 V
3.5
V
VOL(GD)
g, g
drive, GD
Run state,
IGD = 2 mA,
INT = 0 V,
VCOSC = 1 V
0.75
V
VGD(SL)
Gate voltage, sleep-state, GD
Sleep state,
IGD = 2 mA
0.03
0.75
V
I(GDP)
Pulldown current, gate drive
passive, GD
Vbat open,
VGD = 0.75 V
7.5
20
A
I(INT)
Pulldown current, INT
Run state,
VILS > VILR,
VI(INT) = 1 V
2
3
mA
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