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參數(shù)資料
| 型號： | TPCS8211 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSIII） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 224K |
| 代理商： | TPCS8211 |
TPCS8211
2003-02-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
114
Thermal resistance, channel to ambient
(t 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
167
°C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
208
Thermal resistance, channel to ambient
(t 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
357
°C/W
Marking
(Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b)
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
DD
16 V, T
ch
25°C (initial), L 1.0 mH, R
G
25 , I
AR
6 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6:
○
on lower right of the marking indicates Pin 1.
※
Weekly code:
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
※
Type
S8211
FR-4
25.4 25.4 0.8
(Unit: mm)
FR-4
25.4 25.4 0.8
(Unit: mm)
Lot No.
(Three digits)
Year of manufacture
(One low-order digits of calendar year)
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| TPCS8211(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8211_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
| TPCS8212 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type (U-MOSIII) |
| TPCS8212(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8212_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications |
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