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參數(shù)資料
| 型號： | TPA751GQSR |
| 廠商： | Texas Instruments, Inc. |
| 元件分類： | 音頻放大器 |
| 英文描述： | Amplifier. Other |
| 中文描述： | 放大器。其他 |
| 文件頁數(shù)： | 2/23頁 |
| 文件大?。?/td> | 362K |
| 代理商： | TPA751GQSR |
TPA751
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
WITH DIFFERENTIAL INPUTS
SLOS336C
–
DECEMBER 2000
–
REVISED OCTOBER 2002
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
SMALL OUTLINE
MicroStar-Junior (BGA)
(GQS)
(D)
MSOP
(DGN)
Device
TPA751GQS
TPA751D
TPA751DGN
Package symbolization
In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks can be driven, as long
as the RMS value is less than 350 mW.
The D, DGN, and GQS packages are available taped and reeled. To order a taped and reeled part, add the suffix R to the
part number (e.g., TPA751DR).
TPA751
TPA751
ATC
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
GQS
D, DGN
BYPASS
E3
2
I
BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be
connected to a 0.1-
μ
F to 2.2-
μ
F capacitor when used as an audio amplifier.
GND
§
7
GND is the ground connection.
IN
–
E5
4
I
IN
–
is the inverting input. IN
–
is typically used as the audio input terminal.
IN+
E4
3
I
IN+ is the noninverting input. IN+ is typically tied to the BYPASS terminal for SE input.
SHUTDOWN places the entire device in shutdown mode when held low (IDD = 1.5
nA).
VDD is the supply voltage terminal.
VO+ is the positive BTL output.
VO
–
is the negative BTL output.
SHUTDOWN
E2
1
I
VDD
VO+
VO
–
§
A1, A3, A5, B1
–
B5, C1
–
C5, D1
–
D5 are electrical and thermal connections to the ground plane.
A4
6
A5
5
O
A2
8
O
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
Input voltage, V
I
Continuous total power dissipation
Operating free-air temperature range, T
A
Operating junction temperature range, T
J
Storage temperature range, T
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internally limited (see Dissipation Rating Table)
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
0.3 V to V
DD
+0.3 V
–
40
°
C to 85
°
C
–
40
°
C to 150
°
C
–
65
°
C to 150
°
C
260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under
“
absolute maximum ratings
”
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under
“
recommended operating conditions
”
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
PACKAGE
GQS||
TA = 25
°
C
1.66 W||
DERATING FACTOR
13.3 mW/
°
C
5.8 mW/
°
C
17.1 mW/
°
C
TA = 70
°
C
1.06 W
TA = 85
°
C
866 mW
D
725 mW
2.14 W#
464 mW
377 mW
DGN
1.37 W
1.11 W
#See the Texas Instruments document,
PowerPAD Thermally Enhanced Package Application Report
(SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB
layout based on the information in the section entitled
Texas Instruments Recommended Board for PowerPAD
on page 33 of that document.
||See the Texas Instruments document,
MicroStar Junior
Made Easy Application Brief
(SSYA009A) for board
layout information on the MicroStar Junior package.
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