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參數(shù)資料
| 型號(hào)： | TPA2015D1YZHT |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | 1.7 W, 1 CHANNEL, AUDIO AMPLIFIER, BGA16 |
| 封裝： | 1.954 X 1.954 MM, 0.50 MM PITCH, DSBGA-16 |
| 文件頁數(shù)： | 22/27頁 |
| 文件大小： | 1016K |
| 代理商： | TPA2015D1YZHT |
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SLOS638 – MAY 2010
www.ti.com
THERMAL INFORMATION
TPA2015D1
THERMAL METRIC(1)
YZH
UNITS
16 PINS
qJA
Junction-to-ambient thermal resistance(2)
75
qJC(top)
Junction-to-case(top) thermal resistance (3)
22
qJB
Junction-to-board thermal resistance (4)
26
°C/W
yJT
Junction-to-top characterization parameter (5)
0.5
yJB
Junction-to-board characterization parameter (6)
25
qJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
n/a
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
Supply voltage, VBAT
2.5
5.2
V
VIH
High–level input voltage, END, ENB
1.3
V
VIL
Low–level input voltage, END, ENB
0.6
V
TA
Operating free-air temperature
–40
85
°C
TJ
Operating junction temperature
–40
150
°C
ELECTRICAL CHARACTERISTICS
VBAT= 3.6 V, Gain = 6 dB, RAGC = Float, TA = 25°C, RL = 8 + 33 mH (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
END = 0 V, ENB = VBAT
2.5
5.2
V
VBAT supply voltage range END = VBAT, ENB = VBAT, AGC options 1, 2, and 3
2.5
5.2
END = VBAT, ENB = VBAT, AGC option 0
2.8
5.2
Class-D supply voltage
END = ENB = VBAT, boost converter active
5.2
5.8
V
range
END = VBAT, ENB = 0 V
3.1
5.25
V
VBAT = 2.5 V to 5.2 V, END = ENB = VBAT
85
Power supply ripple
dB
VBAT = 2.5 V to 5.2 V, END = VBAT, ENB = 0 V
rejection
75
(pass through mode)
END = 0 V, ENB = VBAT
0.5
mA
Operating quiescent
current
END = ENB = VBAT
1.7
2.2
mA
Shutdown quiescent
VBAT = 2.5 V to 5.2 V, END = ENB = GND
0.2
3
mA
current
Gain = 6 dB (connect to GND)
0
0.25 × VBAT
Gain control pin voltage
Gain = 15.5 dB (float)
0.4 × VBAT
0.6 × VBAT
V
Gain = 20 dB (connect to VBAT)
0.75 × VBAT
4
Copyright 2010, Texas Instruments Incorporated
Product Folder Link(s): TPA2015D1
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