參數(shù)資料
型號(hào): TP0620
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-200V,低門限2.4V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
中文描述: P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管(擊穿電壓- 200V的電壓,低門限為2.4V,P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管)
文件頁數(shù): 3/4頁
文件大?。?/td> 27K
代理商: TP0620
7-125
7
TP0620
Typical Performance Curves
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
0
-10
-20
V
DS
(volts)
-30
-50
-40
Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
V
DS
(volts)
-6
-10
-8
-8V
Maximum Rated Safe Operating Area
-1
-1000
-100
-10
-0.1
-1.0
-10
-0.01
Thermal Response Characteristics
T
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
Transconductance vs. Drain Current
250
200
150
100
50
0
0
-1.0
-2.0
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
0
150
100
50
125
75
25
TO-92
0
TO-92 (DC)
T
C
= 25
°
C
-8V
-6V
-4V
-6V
-4V
I
D
I
D
VGS = -10
VGS = -10
G
F
(
I
D
(amperes)
T
C
(
°
C)
P
D
(
T
A
= -55
°
C
V
DS
= -25V
T
A
= 150
°
C
T
A
= 25
°
C
V
DS
(volts)
I
D
t
p
(seconds)
TO-92
P
D
= 1W
T
C
= 25
°
C
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