參數(shù)資料
型號: TP0610T
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-61V,P溝道增強型垂直DMOS結構場效應管)
中文描述: P通道增強模式垂直的DMOS場效應管(擊穿電壓- 61V,P溝道增強型垂直的DMOS結構場效應管)
文件頁數(shù): 4/4頁
文件大?。?/td> 30K
代理商: TP0610T
7-122
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
100
C
0
-10
-20
-30
-40
50
75
25
0
0
-2
-4
-6
-8
-10
-2.0
-1.6
-1.2
-0.8
-0.4
0
-50
0
50
100
150
1.1
1.0
20
16
12
8
4
0
1.2
1.1
1.0
0.9
0.8
0.7
-10
-8
-6
-4
-2
0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
35 pF
T
= -55
°
C
A
25
°
C
0
-0.4
-0.8
-1.2
-2.0
-1.6
f = 1MHz
0.9
1.6
1.4
1.2
1.0
0.8
125
°
C
0
R
D
(
B
D
(
T
j
(
°
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
GS
= -4.5V
V
GS
= -10V
T
j
(
°
C)
V
G
(
R
D
(
V
GS(th)
and R
DS(ON)
Variation with Temperature
V
GS
(volts)
I
D
V
DS
= -25V
V
GS(th)
@ -1mA
R
DS(ON)
@ -10V,
-0.5A
C
ISS
C
OSS
C
RSS
Q
G
(nanocoulombs)
V
G
(
V
DS
(volts)
V
DS
= -10V
V
DS
= -40V
125 pF
TP0610T
Typical Performance Curves
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