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參數(shù)資料
| 型號(hào)： | TP0604 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET Quad Array(擊穿電壓-40V，低門限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管四陣列) |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管四陣列（擊穿電壓- 40V的，低門限為2.4V，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管四陣列） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 26K |
| 代理商： | TP0604 |
9-18
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10
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20
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19
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17
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15
14
13
12
top view
SOW - 20
TP0604
Low Threshold
P-Channel Enhancement-Mode
Vertical DMOS FET Quad Array
Pin Configuration
Advanced DMOS Technology
These enhancement-mode (normally-off) DMOS FET arrays
utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex quad arrays use four independent DMOS transistors.
They are ideally suited to a wide range of switching and ampli-
fying applications where high breakdown voltage, high input im-
pedance, low input capacitance, and fast switching speeds are
desired.
D
1
D
4
D
1
D
1
G
1
S
1
S
2
G
2
D
2
D
2
D
2
D
4
D
4
G
4
S
4
S
3
G
3
D
3
D
3
D
3
Note: See Package Outline section for dimensions.
Ordering Information
BV
DSS
/
BV
DGS
-40V
R
DS (ON
)
Max
SOW-20*
2.0
TP0604WG
*
Same as SO-20 with 300 mil wide body.
Order Number / Package
Features
4 independent channels
4 electrically isolated die
Commercial and Military versions available
Free from secondary breakdown
Low power drive requirement
Low C
ISS
and fast switching speeds
High input impedance and high gain
Applications
Telecom switches
Logic level interfaces
Battery operated systems
Photo voltaic drives
Soild state relays
Motor controls
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP0604 | CONNECTOR ACCESSORY |
| TP0604N3 | CONNECTOR ACCESSORY |
| TP0604WG | CONNECTOR ACCESSORY |
| TP0606 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V，低門限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| TP0606 | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP0604N3 | 功能描述:MOSFET 40V 2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0604N3 P014 | 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 40V 0.43A 3-Pin TO-92 T/R |
| TP0604N3-G | 功能描述:MOSFET 40V 2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0604N3-G P002 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
| TP0604N3-G P003 | 制造商:Supertex Inc 功能描述:P-CH Enhancmnt Mode MOSFET |
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