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參數(shù)資料
| 型號(hào)： | TP0202K-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | TP0202K-T1 |
TP0202K
Vishay Siliconix
www.vishay.com
2
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
=
100 A
V
DS
= V
GS
, I
D
=
250 A
30
38
V
Gate-Threshold Voltage
1.3
2
3.0
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
5 V
50
V
DS
= 0 V, V
GS
=
10 V
300
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
100
V
DS
=
30 V, V
GS
= 0 V, T
J
= 85 C
10
A
On-State Drain Current
a
I
D(on)
V
DS
=
10 V, V
GS
=
10 V
500
mA
Drain Source On Resistance
Drain-Source On-Resistance
a
r
DS(on)
V
GS
=
4.5 V, I
D
=
50 mA
2.1
3.5
V
GS
=
10 V, I
D
=
500 mA
1.25
1.4
Forward Transconductance
a
g
fs
V
DS
=
5 V, I
D
=
200 mA
315
mS
Diode Forward Voltage
a
V
SD
I
S
=
250 mA, V
GS
= 0 V
1.2
V
Dynamic
Total Gate Charge
Q
g
Q
gs
1000
Gate-Source Charge
V
=
16 V, V
=
10 V, I
DS
200 mA
225
pC
Gate-Drain Charge
Q
gd
GS
D
175
Input Capacitance
C
iss
31
Output Capacitance
C
oss
V
=
15 V, V
= 0 V, f = 1 MHz
DS
GS
11
pF
Reverse Transfer Capacitance
C
rss
4
Switching
b
Turn On Time
Turn-On Time
t
d(on)
t
r
9
V
= 15 V, R
L
= 75
200 mA, V
GEN
=
10 V, R
G
= 6
6
ns
Turn Off Time
Turn-Off Time
t
d(off)
I
D
30
t
f
20
Notes
a.
b.
Pulse test: PW
Switching time is essentially independent of operating temperature.
300 ms duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP0202K-T1-E3 | 功能描述:MOSFET 30V 0.385A 1.4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0202K-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CH MOSFET -30V 385mA TO-236 制造商:Vishay Siliconix 功能描述:P CH MOSFET, -30V, 385mA, TO-236 |
| TP0202K-T1-GE3 | 功能描述:MOSFET 30V 0.385A 350mW 3.5ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0202T | 功能描述:MOSFET 20V 0.41A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0202T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.41A 3-Pin TO-236 T/R |
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