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參數(shù)資料
| 型號(hào)： | TO-220FP |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel Power Field Effect Transistor |
| 中文描述： | N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | TO-220FP |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 3/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Characteristics Curve
Typical On-Resistance & Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
6
7
8
9
10
11
12
Drain Current-I
D
(A)
D
D
V
GS
=10V
On Resistance Variation with Temperature
0.00
0.50
1.00
1.50
2.00
2.50
0
25
50
75
100
125
150
Case Temperature-Tc (
o
C)
N
R
D
V
GS
=10 V
I
D
=3A
On-Region Characteristic
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
I
V
GS
=4
V
GS
=5V
V
GS
=6V
V
GS
=10V
V
GS
=8V
Capacitance Characteristics
0
500
1000
1500
2000
0.1
1
10
100
V
DS
, Deain-Source Voltage (V)
C
Ciss
Crss
Coss
Drain Current Variation with Gate Voltage &
Temperature
0
1
2
3
4
5
6
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Gate-Source Voltage-V
GS
(V)
D
D
Tc= 25°C
V
DS
=10 V
Typical On-Resistance & Drain Current
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0
1
2
3
4
5
6
7
8
9
10
11
12
Drain Current-I
D
(A)
D
D
V
GS
=10V
V
GS
=15V
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