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參數(shù)資料
| 型號(hào)： | TO-220FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR OUTLINE PACKAGE |
| 中文描述： | 晶體管封裝 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 71K |
| 代理商： | TO-220FP |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 2/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-263
TO-220AB
TO-220FP
1.7
1.7
3.3
R
θ
JC
Thermal Resistance Junction to Case Max.
O
C/W
R
θ
JA
Thermal Resistance Junction to Ambient Max.
62
O
C/W
ELectrical Characteristics
(T
J
=25
O
C, unless otherwise specified)
Symbol
V
(BR)DSS
Characteristic
Min.
600
-
-
-
-
2
Typ.
-
-
-
-
-
3
Max.
-
1
50
100
-100
4
Unit
V
uA
uA
nA
nA
V
S
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V, T
j
=125
O
C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=3.6A)*
Forward Transconductance (V
DS
=15V, I
D
=3.6A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
1
1.2
2
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
1498
158
29
14
19
40
26
35.5
8.1
14.1
V
GS
=0V, V
DS
=25V, f=1MHz
pF
(V
DD
=300V, I
D
=6A, R
G
=9.1
,
V
GS
=10V)*
ns
50
-
-
(V
DS
=300V, I
D
=6A, V
GS
=10V)*
nC
L
D
-
4.5
-
nH
L
S
-
7.5
-
nH
*: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
**: Negligible, Dominated by circuit inductance
Characteristic
Min.
-
-
-
Typ.
-
**
266
Max.
1.2
-
-
Units
V
ns
ns
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
S
=6A, V
GS
=0V, T
J
=25
o
C
I
S
=6A, d
IS
/d
t
=100A/us
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