參數(shù)資料
型號(hào)： TN28F001BX-B90
廠商： INTEL CORP
元件分類： DRAM
英文描述： 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
中文描述： 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
封裝： 0.450 X 0.550 INCH, PLASTIC, LCC-32
文件頁(yè)數(shù)： 33/33頁(yè)
文件大?。?/td> 436K
代理商： TN28F001BX-B90
28F001BX-T/28F001BX-B
Revision History
Number
Description
-004
Removed
Preliminary
classification.
Latched address A
16
in Figure 5.
Updated Boot Block Program and Erase section: ‘‘If boot block program or erase is attempted
while RP
Y
is at V
IH
,
either the Program Status or Erase Status bit will be set to ‘‘1’’,
reflective of the operation being attempted and indicating boot block lock.’’
Updated Figure 11, 28F001BX Erase Suspend/Resume Flowchart
Added DC Characteristics typical current values
Combined V
PP
Standby current and V
PP
Read current into one V
PP
Standby current spec with
two test conditions (DC Characteristics table)
Added maximum program/erase times to Erase and Programming Performance table.
Added Figures 13–16
Added Extended Temperature proliferations
-005
PWD changed to RP
Y
for JEDEC standardization compatibility
Revised symbols, i.e.; CE, OE, etc. to CE
Y
, OE
Y
, etc.
-006
Added specifications for -90 and -70 product versions.
Added V
OH
CMOS Specification.
-007
Added reference to 28F001BN.
33
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN28F001BX-T150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
TN28F001BX-T90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
TN28F010-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F010-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
TN28F010-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
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