參數(shù)資料
型號(hào)： TN2535
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓350V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓350V，2.0V的低門限，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管）
文件頁數(shù)： 2/2頁
文件大?。?/td> 18K
代理商： TN2535
2
TN2535
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100
FAX: (408) 222-4895
www.supertex.com
06/09/99
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.6W
θ
jc
°
C/W
15
θ
ja
°
C/W
78
I
DR
*
I
DRM
TO-243AA
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
283mA
1.6A
283mA
1.6A
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
350
V
V
GS
= 0V, I
D
= 250
μ
A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.0
mV/
°
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
±
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1.0
μ
A
V
GS
= 0V, V
DS
= Max Rating
I
D(ON)
ON-State Drain Current
0.5
A
V
GS
= 4.5V, V
DS
= 25V
1.0
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
15
V
GS
= 3.0V, I
D
= 20mA
10
V
GS
= 4.5V, I
D
= 100mA
10
V
GS
= 10V, I
D
= 200mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
°
C
V
GS
= 10V, I
D
= 500mA
G
FS
Forward Transconductance
125
m
V
DS
= 25V, I
D
= 100mA
C
ISS
C
OSS
C
RSS
Input Capacitance
125
Common Source Output Capacitance
70
pF
Reverse Transfer Capacitance
25
t
d(ON)
t
r
t
d(OFF)
t
f
Turn-ON Delay Time
20
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 25
Rise Time
15
ns
Turn-OFF Delay Time
25
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 200mA
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
相關(guān)PDF資料
PDF描述
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TN2640 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓400V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
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