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參數(shù)資料
| 型號： | TN2535 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓350V，低門限2.0V，N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強型場效應(yīng)管垂直的DMOS（擊穿電壓350V，2.0V的低門限，?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | TN2535 |
1
TN2535
06/09/99
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
TN2535
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Low threshold
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Package Options
Note: See Package Outline section for dimensions.
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-243AA
(SOT-89)
G
D
S
D
Ordering Information
BV
DSS
/
BV
DGS
350V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-243AA*
10
2.0V
1.0A
TN2535N8
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Order Number / Package
New Product
Low Threshold
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN2540 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓400V，低門限2.0V，N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| TN2640 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓400V，低門限2.0V，N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| TN3012L | N-Channel 300-V (D-S) MOSFET |
| TN3019A | CONNECTOR ACCESSORY |
| TN3440A | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN2535N8 | 功能描述:MOSFET 350V 10Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2535N8-G | 功能描述:MOSFET 350V 10Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2540 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN2540_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET |
| TN2540-1000G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:25A SCRS |
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