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參數(shù)資料
| 型號(hào)： | TN1625-600G-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 晶閘管 |
| 英文描述： | 16 A, 600 V, SCR |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | TN1625-600G-TR |
TN1625, TYN616, TYN816
Characteristics
3/9
Maximum average power
dissipation versus average on-state
current
Average and D.C. on-state current
versus ambient temperature
(copper surface under tab: S=1cm
2
)
(D
2
PAK)
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature
Figure 1.
Figure 2.
Average and D.C. on-state current
versus case temperature
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
P(W)
I
(A)
T(AV)
α
= 180°
360°
α
0
25
50
75
100
125
0
2
4
6
8
10
12
14
16
18
I
(A)
T(AV)
T
(°C)
case
α
= 180°
D.C.
Figure 3.
Figure 4.
Relative variation of thermal
impedance versus pulse duration
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
(A)
T(AV)
T
(°C)
amb
α
= 180°
D.C.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K=[Z /R
th
]
t (s)
Z
th(j-c)
Z
th(j-a)
Figure 5.
Figure 6.
Surge peak on-state current versus
number of cycles
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
I
GT H L
j
I
GT H L
j
I
GT
I
H
& I
L
1
10
100
1000
0
20
40
60
80
100
120
140
160
180
200
I
(A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =110°C
t =10ms
p
One cycle
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