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參數(shù)資料
| 型號(hào)： | TN1625-600G-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 晶閘管 |
| 英文描述： | 16 A, 600 V, SCR |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 110K |
| 代理商： | TN1625-600G-TR |
Characteristics
TN1625, TYN616, TYN816
2/9
1
Characteristics
Absolute ratings (limiting values)
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Test Conditions
Thermal resistance
S = copper surface under tab
Table 2.
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 °Conduction angle)
T
c
= 110 °C
16
A
I
T(AV)
Average on-state current (180 °Conduction angle)
T
c
= 110 °C
10
A
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25 °C
200
A
t
p
= 10 ms
190
I
2
t
I
2
t Value for fusing
t
p
= 10 ms
T
j
= 25 °C
180
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
F = 60 Hz
T
j
= 125 °C
50
A/μs
I
GM
Peak gate current
t
p
= 20 μs
T
j
= 125 °C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 125 °C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage
5
V
Table 3.
Symbol
Value
Unit
I
GT
V
D
= 12 V R
L
= 33
Ω
MIN.
2
mA
MAX.
25
V
GT
V
GD
I
H
I
L
dV/dt
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Ω
I
T
= 500 mA Gate open
I
G
= 1.2 x I
GT
V
D
= 67 % V
DRM
Gate open
I
TM
= 32 A t
p
= 380 μs
Threshold voltage
T
j
= 125 °C
MIN.
0.2
V
MAX.
40
mA
MAX.
60
mA
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
MIN.
500
V/μs
V
TM
V
t0
R
d
MAX.
1.6
V
MAX.
0.77
V
Dynamic resistance
MAX.
23
m
Ω
I
DRM
I
RRM
V
DRM
= V
RRM
MAX.
5
μA
2
mA
Table 4.
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
1.1
°C/W
R
th(j-a)
Junction to ambient (DC)
S = 01 cm
2
D
2
PAK
45
°C/W
TO-220AB
60
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