參數(shù)資料
型號(hào)： TN0604
廠商： ELAN Microelctronics Corp .
英文描述： N-Channel Enhancement-Mode Vertical DMOS FET Quad Array(擊穿電壓40V，低門限1.6V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管四陣列)
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管立式DMOS的四陣列（40V的擊穿電壓，1.6V的低門限，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管四陣列）
文件頁數(shù)： 2/4頁
文件大?。?/td> 27K
代理商： TN0604
9-15
9
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
40
V
V
GS
= 0V, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 1.5A
V
GS
= 10V, I
D
= 1.5A
V
DS
= 20V, I
D
= 1.5A
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
Gate Threshold Voltage
0.6
1.6
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-4.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
1.5
2.1
4.0
7.0
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
1.0
1.6
1.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.5
0.75
%/
°
C
0.5
0.8
Input Capacitance
140
190
Common Source Output Capacitance
75
110
pF
Reverse Transfer Capacitance
25
50
Turn-ON Delay Time
10
Rise Time
6.0
Turn-OFF Delay Time
25
Fall Time
20
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
300
ns
Notes
:
1: All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
Thermal Characteristics
Package
I
D
(continuous)*
(single die)
A
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
1.5W
θ
jc
°
C/W
—
θ
ja
°
C/W
I
DR
*
I
DRM
(single die)
SOW-20
*
I
D
(continuous) is limited by max rated T
j
.
1.0A
4.0A
84
1.0A
4.0A
V
DD
= 20V
I
D
= 0.5A
R
GEN
= 25
ns
Switching Waveforms and Test Circuit
TN0604
相關(guān)PDF資料
PDF描述
TN0610 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TN0606 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TN0606 N-Channel Enhancement-Mode Vertical DMOS FETs
TN0606N3 N-Channel Enhancement-Mode Vertical DMOS FETs
TN0606N5 N-Channel Enhancement-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN0604_07 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET
TN0604N3 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0604N3-G 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0604N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0604N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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