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參數(shù)資料
| 型號： | TN0601L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓60V，夾斷電流0.47A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流0.47A的N溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | TN0601L |
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
11-2
Document Number: 70201
S-00591—Rev. D, 03-Apr-00
Limits
TN0601L
VN0606L
VN66AFD
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
70
60
60
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
1.6
0.5
2
V
DS
= V
GS
, I
D
= 1 mA
1.7
0.8
2
0.8
2.5
Gate-Body Leakage
B d L
I
GSS
V
DS
= 0 V, V
GS
=
30 V
100
100
T
C
= 125 C
500
nA
V
DS
= 0 V, V
GS
=
20 V
10
Zero Gate VoltageDrain Current
V l
V l
D i C
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
T
J
= 125 C
500
V
DS
= 48 V, V
GS
= 0 V
1
1
T
J
= 125 C
100
T
C
= 125 C
10
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
0.5
0.25
A
V
DS
= 10 V, V
GS
= 10 V
2.4
1
1.5
1.5
D i S
Drain-Source On-Resistance
O R
O R
O R
b
V
GS
= 3.5 V, I
D
= 0.04 A
4
5
V
GS
= 4.5 V, I
D
= 0.25 A
2
3
T
J
= 125 C
3.8
6
r
DS(on)
V
GS
= 5 V, I
D
= 0.3 A
2.3
5
V
GS
= 10 V, I
D
= 0.5 A
1.2
3
T
J
= 125 C
2.3
6
V
GS
= 10 V, I
D
= 1 A
1.3
1.8
3
T
C
= 125 C
2.5
6
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
200
170
170
mS
Common Source Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
0.3
Dynamic
Input Capacitance
C
iss
V
DS
= 25 V V
= 0 V,
f = 1 MHz
f 1 MHz
35
60
50
50
Output Capacitance
C
oss
25
50
40
40
pF
Reverse Transfer Capacitance
C
rss
6
10
10
10
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23
I
D
1 A, V
= 10 V
R
G
= 25
8
15
10
15
ns
Turn-Off Time
t
OFF
9
15
10
15
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ06
2%.
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| TN0610 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V，低門限2.0V，N溝道增強型垂直DMOS結構場效應管) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TN0602 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0602WG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | SO |
| TN0604 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604N3 | 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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