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參數(shù)資料
| 型號(hào)： | TN0401L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓40V，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓40V的，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | TN0401L |
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
4
Document Number: 70199
S-58620—Rev. D, 21-Jun-99
0.1
1
10
100
10
1
V
DD
= 25 V
R
G
= 25
V
GS
= 0 to 10 V
t
d(on)
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
N
T
t
1
– Square Wave Pulse Duration (sec)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (pC)
–
I
C
–
V
t
t
d(off)
t
r
t
f
10
1
0.6
0.8
2.0
1.0
1.2
1.4
1.6
1.8
VDS= 10 V
–55 C
0.1
0.01
T
J
= 150 C
120
100
80
0
0
10
50
60
40
20
30
40
20
Ciss
Coss
Crss
VGS= 0 V
f = 1 MHz
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
5 K
1
100
500
10
0.5
5
50
1 K
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
6
5
4
0
0
80
400
3
2
160
240
320
1
ID= 1 A
VDS= 15 V
24 V
100 C
25 C
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