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參數(shù)資料
| 型號(hào)： | TN0401L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓40V，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓40V的，夾斷電流0.64A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | TN0401L |
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
Document Number: 70199
S-58620—Rev. D, 21-Jun-99
www.siliconix.com FaxBack 408-970-5600
3
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–
I
–
I
–
I
–
r
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
T
J
– Junction Temperature ( C)
r
(
2.0
0
1
2
3
4
5
1.6
1.2
0.8
0.4
0
6 V
5 V
4 V
3 V
2 V
7 V
T
J
= 25 C
V
GS
= 10 V
200
0
0.4
0.8
1.2
1.6
2.0
160
120
80
40
0
1.7 V
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
T
J
= 25 C
500
400
300
0
0
1
5
200
100
2
3
4
125_C
25_C
VDS= 15 V
T
J
= –55 C
2.5
2.0
1.5
0
0
1
1.0
0.5
2
3
T
J
= 25 C
0
4
8
12
16
20
3
2
0
1
T
J
= 25 C
2.25
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
ID= 0.5 A
0.1 A
10 V
ID= 0.2 A
V
GS
= 4.5 V
6 V
10 V
V
GS
= 10 V
r
)
)
0.5 A
1.0 A
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