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參數(shù)資料
| 型號(hào)： | TN0401L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-, 30-, 40-V (D-S) MOSFETs |
| 中文描述： | N溝道20 - ，30 - ，40 - V（下局副局長(zhǎng)）的MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 46K |
| 代理商： | TN0401L |
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70199
S-04279
—
Rev. E, 16-Jul-01
Limits
TN0201L
TN0401L
VN0300L
VN0300LS
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
TN0201L
55
20
Drain-Source Breakdown Voltage
V
(BR)DSS
V
= 0 V
I = 10 A
TN0401L
55
40
30
V
V
DS
= V
GS
, I
D
= 0.25 mA
1.4
0.5
2
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.5
0.8
2.5
V
DS
= 0 V, V
GS
=
20 V
10
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
30 V
100
nA
V
DS
= 30 V, V
GS
= 0 V
10
T
J
= 125 C
500
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
1
A
T
J
= 125 C
100
V
DS
= 10 V, V
GS
= 4.5 V
0.9
0.25
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
3.5
1
1
A
V
GS
= 3.5 V, I
D
= 0.05 A
1.8
4
V
GS
= 5 V, I
D
= 0.3 A
1.2
3.3
V
GS
= 4.5 V, I
D
= 0.25 A
1.4
2
Drain-Source On-Resistance
b
r
DS(on)
T
J
= 125 C
2.6
4
V
GS
= 10 V, I
D
= 1 A
0.85
1.2
1.2
T
J
= 125 C
1.6
2.4
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
500
200
200
mS
Dynamic
Input Capacitance
C
iss
38
60
100
Output Capacitance
C
oss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
33
50
95
pF
Reverse Transfer Capacitance
C
rss
8
15
25
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
L
= 14
I
D
1 A, V
= 10 V
R
G
= 25
10
30
30
Turn-Off Time
t
OFF
13
30
30
ns
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ03
2%.
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