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參數(shù)資料
| 型號： | TN0205A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V MOSFET(漏源電壓20V的N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N溝道20 - V MOSFET的（漏源電壓20V的的N溝道增強(qiáng)型MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | TN0205A |
TN0205A/AD
Vishay Siliconix
New Product
www.siliconix.com FaxBack 408-970-5600
2
Document Number: 70868
06-May-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 10 A
20
24
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 50 A
0.4
0.9
1.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
2
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
0.001
100
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
5
A
On-State Drain Current
a
I
D(on)
V
DS
= 5.0 V, V
GS
= 2.5 V
120
160
mA
V
DS
= 8.0 V, V
GS
= 4.5 V
400
800
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
=
150 mA
1.6
2.5
V
GS
= 4.5 V, I
D
= 250 mA
1.2
2.0
Forward Transconductance
a
g
fs
V
DS
= 2.5 V, I
D
= 50 mA
200
mS
Diode Forward Voltage
a
V
SD
I
S
= 50 mA, V
GS
= 0 V
0.7
1.2
V
Dynamic
Total Gate Charge
Q
g
V
DS
= 5 0 V V
V
GS
= 4.5 V, I
D
= 100 mA
4 5 V I
350
450
Gate-Source Charge
Q
gs
25
pC
Gate-Drain Charge
Q
gd
100
Input Capacitance
C
iss
V
DS
= 5 0 V V
V
GS
= 0 V, f = 1 MHz
0 V f
20
Output Capacitance
C
oss
14
pF
Reverse Transfer Capacitance
C
rss
5
Switching
b, c
Turn-On Delay Time
t
d(on)
V
= 3 0 ,
= 100
0 25 A V
D
= 0.25 A, V
GEN
= 4.5 V, R
G
= 10
7
12
Rise Time
t
r
I
4 5 V R
25
35
ns
Turn-Off Delay Time
t
d(off)
19
30
Fall Time
t
f
9
15
Notes
a.
b.
c.
Pulse test; pulse width
For design only, not subject to production testing.
Switching time is essentially independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN0205A/AD | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V MOSFET |
| TN0205AD | 制造商:SILCONIX 功能描述:250 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| TN0205AD-T1 | 功能描述:MOSFET 20V 0.25A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0205A-T1 | 功能描述:MOSFET USE 781-SI1302DL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN020F-100W | 制造商:Aeroflex / Inmet 功能描述:RF COAXIAL TERMINATION |
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