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參數資料
| 型號： | TN0201KL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20−V (D−S) MOSFET |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 76K |
| 代理商： | TN0201KL |
TN0201K/TN0201KL
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
20
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
1.0
2.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
10
On State Drain Current
On-State Drain Current
a
I
D(on)
= 10 V V
V
DS
= 10 V, V
GS
= 10 V
TN0201K
0.5
A
TN0201KL
0.8
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.1 A
0.8
1.4
V
GS
= 10 V, I
D
= 0.3 A
0.47
1.0
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 0.3 A
550
mS
Diode Forward Voltage
V
SD
I
S
= 0.3 A, V
GS
= 0 V
0.85
1.2
V
Dynamic
b
Total Gate Charge
Q
g
1000
1500
Gate-Source Charge
Q
gs
V
DS
= 16 V, V
= 10 V
I
D
0.3 A
205
pC
Gate-Drain Charge
Q
gd
200
Gate Resistance
R
g
48
Turn On Time
Turn-On Time
t
d(on)
4.5
8
t
r
V
DD
= 15 V, R
L
= 50
0 3 A V
I
D
0.3 A, V
GEN
= 10 V
R
G
= 6
8
15
ns
Turn-Off Time
t
d(off)
9
15
t
f
6.3
12
Notes
a.
b.
Pulse test: PW
Guaranteed by design, not subject to production testing.
300 s duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.4
0.8
1.2
1.6
2.0
V
GS
= 10 thru 5 V
T
J
= 125 C
55 C
3 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
4 V
2 V
相關PDF資料 |
PDF描述 |
|---|---|
| TN0201K | N-Channel 20-V MOSFET |
| TN0201K-T1-E3 | N-Channel 20−V (D−S) MOSFET |
| TN0201L | N-Channel 20-, 30-, 40-V (D-S) MOSFETs |
| TN0401L | N-Channel 20-, 30-, 40-V (D-S) MOSFETs |
| TN0201L | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓20V，夾斷電流0.64A的N溝道增強型MOSFET晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TN0201KL-TR1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20−V (D−S) MOSFET |
| TN0201KL-TR1-E3 | 功能描述:MOSFET 20V 0.64A 0.35W 1.4ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0201K-T1-E3 | 功能描述:MOSFET 20V 0.42A 1.0Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0201L | 功能描述:MOSFET 20V 0.64A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0201T | 功能描述:MOSFET 20V 0.39A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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