參數(shù)資料
型號(hào): TN0201KL-TR1
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20−V (D−S) MOSFET
文件頁數(shù): 3/5頁
文件大小: 76K
代理商: TN0201KL-TR1
TN0201K/TN0201KL
Vishay Siliconix
New Product
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
r
D
)
0
10
20
30
40
50
0
4
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 16 V
I
D
= 0.3 A
I
D
Drain Current (A)
V
GS
= 4.5 V
I
D
= 0.1 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
(
r
D
)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
4
8
12
16
20
T
J
= 150 C
T
J
= 25 C
I
D
= 0.3 A
3
0.1
0.001
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
V
GS
= 4.5 V
V
GS
= 10 V
I
D
1
0.01
相關(guān)PDF資料
PDF描述
TN0201KL N-Channel 20−V (D−S) MOSFET
TN0201K N-Channel 20-V MOSFET
TN0201K-T1-E3 N-Channel 20−V (D−S) MOSFET
TN0201L N-Channel 20-, 30-, 40-V (D-S) MOSFETs
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TN0201KL-TR1-E3 功能描述:MOSFET 20V 0.64A 0.35W 1.4ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0201K-T1-E3 功能描述:MOSFET 20V 0.42A 1.0Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0201L 功能描述:MOSFET 20V 0.64A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0201T 功能描述:MOSFET 20V 0.39A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0201T 制造商:Vishay Siliconix 功能描述:MOSFET N SOT-23