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參數(shù)資料
| 型號(hào)： | TN0200TS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET(N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N溝道增強(qiáng)型MOSFET（不適用溝道增強(qiáng)型MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | TN0200TS |
TN0200T/TS
2
Siliconix
S-52426—Rev. B, 14-Apr-97
Specifications
a
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(
BR)DSS
V
GS
= 0 V, I
D
= 10 A
20
36
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 50 A
0.5
0.9
1.5
Gate-Body Leakage
I
GSS
V
DS
= V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
A
T
J
= 55 C
10
On State Drain Current
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
2.5
A
V
DS
5 V, V
GS
= 2.5 V
1.5
Drain Source On Resistance
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.6 A
0.29
0.4
V
GS
= 2.5 V, I
D
= 0.6 A
0.34
0.5
Forward Transconductance
b
g
fs
V
DS
= 5 V, I
D
= 0.6 A
2.2
S
Diode Forward Voltage
b
V
SD
I
S
= 0.6 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
Total Gate Charge
Q
g
1900
2800
Gate-Source Charge
Q
gs
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.6 A
50
pC
Gate-Drain Charge
Q
gd
750
Input Capacitance
C
iss
90
Output Capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
45
Reverse Transfer Capacitance
C
rss
12
Switching
Turn-On Delay Time
t
d(on)
8
13
Rise Time
t
r
14
21
ns
Turn-Off Delay Time
t
d(off)
0.6
21
30
Fall-Time
t
f
7
11
Notes
a.
b.
T
A
= 25 C unless otherwise noted.
Pulse test: PW
VNLJ02
300 s duty cycle
2%.
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