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參數(shù)資料
| 型號(hào)： | TMS6644148A |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4，銀行同步動(dòng)態(tài)隨機(jī)存取記憶體 |
| 文件頁數(shù)： | 16/56頁 |
| 文件大?。?/td> | 958K |
| 代理商： | TMS6644148A |
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TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
16
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
interrupted bursts (continued)
DQ
CLK
C0 + 1
C0
nHZP3
nCCD = 2
Interrupting
DEAC/DCAB
Command
READ Command
at Column Address C0
(see Note A)
NOTE A: For this example, assume CAS latency = 3 and burst length > 2.
Figure 5. Read Burst Interrupted by DEAC Command
Table 8. Write-Burst Interruption
INTERRUPTING COMMAND
EFFECT OR NOTE ON USE DURING WRITE BURST
READ, READ-P
Data that was input on the previous cycle is written and no further data inputs are accepted (see Figure 6).
WRT, WRT-P
The new WRT (WRT-P) command and data-in immediately supersede the write burst in progress
(see Figure 7).
DEAC, DCAB
The DEAC/DCAB command immediately supersedes the write burst in progress. DQMx must be used to
mask the DQ bus such that the write recovery specification (nWR) is not violated by the
interrupt (see Figure 8).
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| TMS664414DGE-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X4MX4|CMOS|TSOP|54PIN|PLASTIC |
| TMS664414DGE-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X4MX4|CMOS|TSOP|54PIN|PLASTIC |
| TMS664414DGE-8A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X4MX4|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS66481410 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
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