參數(shù)資料
型號: TMS6641648A
廠商: Texas Instruments, Inc.
英文描述: 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4,銀行同步動態(tài)隨機存取記憶體
文件頁數(shù): 40/56頁
文件大小: 958K
代理商: TMS6641648A
TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
40
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
R2
R1
R2
R1
R2
R1
ACTV_2
ACTV_1
CKE
CS
A0–A9
A10
A11
A12
A13
W
CAS
RAS
DQMx
DQ
CLK
C4
C3
C2
C1
C0
R3
R3
R3
R0
R0
R0
f
e
d
c
b
a
READ_0
READ_3
READ_2
READ_1
READ_0
ACTV_3
ACTV_0
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q)
(0–3)
ADDR
a
b
c
d
e
f
g
h
. . .
. . .
Q
0
R0
C0
C0+1
Q
1
R1
C1
C1+1
Q
2
R2
C2
C2+1
Q
3
R3
C3
C3+1
. . .
. . .
. . .
. . .
. . .
Column-address sequence depends on programmed burst type and starting addresses C0, C1, and C2 (see Table 4).
Figure 30. Four-Bank Column-Interleaving Read Bursts (CAS latency = 3, burst length = 2)
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