參數(shù)資料
型號(hào): TMS427409ADGA-60
廠商: National Semiconductor Corporation
英文描述: 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 4194304 4位擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁數(shù): 13/37頁
文件大?。?/td> 515K
代理商: TMS427409ADGA-60
TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
13
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 3)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(OE)
Ci(RC)
Ci(W)
Co
A11 is NC (no internal connection) for TMS417409A and TMS427409A.
CAS and OE = VIH to disable outputs
NOTE 3: VCC = NOM supply voltage
±
10%, and the bias on pins under test is 0 V.
Input capacitance, A0–A11
5
pF
Input capacitance, OE
7
pF
Input capacitance, CAS and RAS
7
pF
Input capacitance, W
Output capacitance
7
pF
7
pF
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Note 4)
PARAMETER
’41x409A-50
’42x409A-50
’41x409A-60
’42x409A-60
’41x409A-70
’42x409A-70
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
tCAC
tCPA
tRAC
tOEA
tCLZ
tREZ
tCEZ
tOEZ
tWEZ
NOTES:
Access time from column address (see Note 5)
25
30
35
ns
Access time from CAS (see Note 5)
13
15
18
ns
Access time from CAS precharge (see Note 5)
28
35
40
ns
Access time from RAS (see Note 5)
50
60
70
ns
Access time from OE (see Note 5)
13
15
18
ns
Delay time, CAS to output in low impedance
0
0
0
ns
Output buffer turn off delay from RAS (see Note 6)
3
13
3
15
3
18
ns
Output buffer turn off delay from CAS (see Note 6)
3
13
3
15
3
18
ns
Output buffer turn off delay from OE (see Note 6)
3
13
3
15
3
18
ns
Output buffer turn off delay from W (see Note 6)
3
13
3
15
3
18
ns
4. With ac parameters, it is assumed that tT = 2 ns.
5. For TMS42x409A, access times are measured with output reference levels of VOH = 2 V and VOL = 0.8 V.
6. The maximum values of tREZ, tCEZ, tOEZ, and tWEZ are specified when the output is no longer driven. Data in should not be driven
until one of the applicable maximum specifications is satisfied.
相關(guān)PDF資料
PDF描述
TMS4416 16,384 WORD BY 4 BIT DYNAMIC RAM
TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
TMS45160P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES
TMS46100 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS46100P 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TMS428160 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS428160P 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS428169A 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44100 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44100-10DM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM