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| 型號(hào)： | TMS427409ADGA-60 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4194304 4位擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 12/37頁(yè) |
| 文件大小： | 515K |
| 代理商： | TMS427409ADGA-60 |
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TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
12
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
TMS427409A
PARAMETER
TEST CONDITIONS
’427409A-50
MIN
’427409A-60
MIN
’427409A-70
MIN
UNIT
MAX
MAX
MAX
VOH
High-level
output
voltage
IOH = – 2 mA
LVTTL
2.4
2.4
2.4
V
IOH = – 100
μ
A
LVCMOS
VCC–0.2
VCC–0.2
VCC–0.2
VOL
Low-level
output
voltage
IOL = 2 mA
LVTTL
0.4
0.4
0.4
V
IOL = 100
μ
A
LVCMOS
0.2
0.2
0.2
II
Input current
(leakage)
VCC = 3.6 V,
All others = 0 V to VCC
VI = 0 V to 3.9 V,
±
10
±
10
±
10
μ
A
IO
Output
current
(leakage)
VCC = 3.6 V,
CAS high
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1§
Average
read- or
write- cycle
current
VCC = 3.6 V,
Minimum cycle
120
100
90
mA
ICC2
Average
standby
current
VIH = 2 V (LVTTL)
After one memory cycle, RAS and CAS
high
2
2
2
mA
VIH = VCC – 0.2 V (LVCMOS),
After one memory cycle, RAS and CAS
high
1
1
1
mA
ICC3§
Average
refresh
current
(RAS-only
refresh
or CBR)
VCC = 3.6 V,
RAS cycling,
CAS high (RAS-only refresh),
RAS low after CAS low (CBR)
Minimum cycle,
120
100
90
mA
ICC4
Average
EDO current
VCC = 3.6 V,
RAS low,
tHPC = MIN,
CAS cycling
110
90
80
mA
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
Measured with outputs open
§Measured with a maximum of one address change while RAS = VIL
Measured with a maximum of one address change during each EDO cycle, tHPC
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