參數資料
型號: TMS29F800B-80CDCDQ
廠商: Texas Instruments, Inc.
英文描述: 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
中文描述: 1048576 8位/ 524288由16位閃存
文件頁數: 20/51頁
文件大?。?/td> 685K
代理商: TMS29F800B-80CDCDQ
TMS29F800T, TMS29F800B
1048576 BY 8-BIT/524288 BY 16-BIT
FLASH MEMORIES
SMJS835B – MAY 1997 – REVISED OCTOBER 1997
20
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
word-/byte-mode configuration
The BYTE pin is used to set the device configuration. If BYTE is at a logic 1, the device is in word mode with
all data outputs valid and the DQ15/A
–1
output representing DQ15. Similarly, if BYTE is at a logic 0, the device
is in byte mode with only DQ0–DQ7 valid. The remaining outputs are in high-impedance mode and DQ15/A
–1
is used as an input for the least significant bit (A1) address function. See Figure 3 and Figure 4 for timing
specifications.
CE
OE
BYTE
DQ8–DQ14
DQ15/A–1
DQ8–DQ14
DQ8–DQ14
A–1
DQ15
tELFH
tFHQV
Figure 3. Word-Mode Configuration
CE
OE
BYTE
DQ8–DQ14
DQ15/A–1
DQ8–DQ14
DQ8–DQ14
A–1
DQ15
tELFL
tFLQV
Figure 4. Byte-Mode Configuration
temporary hardware-sector unprotect feature
This feature temporarily enables both programming and erase operations on any combination of one to nineteen
sectors that were previously protected. The unprotect feature is enabled using high voltage V
ID
(11.5 V to
12.5 V) on the RESET pin, using standard command sequences.
Normally, the device is delivered with all sectors unprotected.
P
相關PDF資料
PDF描述
TMS29F800T-90CDCDE 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800B-90CDCDE 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800T-90CDCDL 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800B-90CDCDL 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800B-90CDCDQ 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
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