參數(shù)資料
型號(hào)： TMS28F400BZT90BDBJE
廠商： Texas Instruments, Inc.
英文描述： 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
中文描述： 8-BIT/262144由16位啟動(dòng)塊閃存
文件頁(yè)數(shù)： 17/29頁(yè)
文件大?。?/td> 404K
代理商： TMS28F400BZT90BDBJE
TMS28F400BZT, TMS28F400BZB
524288 BY 8-BIT/262144 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS400E – JUNE 1994 – REVISED JANUARY 1998
17
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature, using test conditions given in Table 6 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IOH = – 2.5 mA,
IOH = – 100
μ
A,
VCC = 4.5 V,
MIN
2.4
MAX
UNIT
VOH
High level output voltage
High-level output voltage
TTL
VCC = 4.5 V
VCC = 4.5 V
IOL = 5.8 mA
V
CMOS
VCC – 0.4
VOL
VID
Low-level output voltage
0.45
V
A9 selection code voltage
11.5
13
V
II
Input current (leakage), except for A9 when A9 = VID
(see Note 7)
VCC = 5.5 V,
VI = 0 V to 5.5 V
±
1
μ
A
IID
IRP
IO
IPPS
IPPL
IPP1
A9 selection code current
A9 = VID
500
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
RP boot-block unlock current
500
±
10
10
Output current (leakage)
VCC = 5.5 V,
VPP
≤
VCC
RP = VSS
±
0.2 V, VPP < VCC
VPP > VCC
VPP = VPPH,
Programming in progress
VO = 0 V to VCC
VPP standby current (standby)
VPP supply current (reset/deep power-down mode)
VPP supply current (active read)
VPP supply current (active byte-write)
(see Notes 8 and 9)
5
200
IPP2
30
mA
IPP3
VPP supply current (active word-write)
(see Notes 8 and 9)
VPP = VPPH,
Programming in progress
40
mA
IPP4
VPP supply current (block-erase) (see Notes 8 and 9)
VPP = VPPH,
Block-erase in progress
30
mA
IPP5
VPP supply current (erase-suspend)
(see Notes 8 and 9)
VPP = VPPH,
Block-erase suspended
200
μ
A
ICCS
VCCsupply current (standby)
VCC supply current (standby)
TTL-input level
VCC = 5.5 V,
VCC = 5.5 V,
E = RP = VIH
E = RP = VIH
0
°
C to 70
°
C
– 40
°
C to 85
°
C
1.5
mA
μ
A
μ
A
μ
A
CMOS-input level
100
ICCL
VCC supply current (reset/deep power-down mode)
supply current (reset/deep power down mode)
RP = VSS
0.2 V
±
0 2 V
1.2
1 2
1.2
ICC1
VCCsupply current (active read)
VCC supply current (active read)
TTL-input level
VCC = 5.5 V,
f = 10 MHz,
E = VIL,
IOUT = 0 mA
E = VSS
±
0.2 V,
IOUT = 0 mA
60
mA
CMOS-input level
VCC = 5.5 V,
f = 10 MHz,
55
mA
ICC2
VCC supply current (active byte-write)
(see Notes 8 and 9)
VCC = 5.5 V,
Programming in progress
60
mA
ICC3
VCC supply current (active word-write)
(see Notes 8 and 9)
VCC = 5.5 V,
Programming in progress
65
mA
ICC4
VCC supply current (block-erase) (see Notes 8 and 9)
VCC = 5.5 V,
Block-erase in progress
30
mA
ICC5
VCC supply current (erase-suspend)
(see Notes 8 and 9)
VCC = 5.5 V,
Block-erase suspended
E = VIH,
10
mA
NOTES:
7. DQ15/A–1 is tested for output leakage only.
8. Characterization data available
9. All current values are root mean square (RMS) unless otherwise noted.
Table 6. AC Test Conditions
IOL
(mA)
IOH
(mA)
VZ
(V)
VOL
(V)
VOH
(V)
VIL
(V)
VIH
(V)
CLOAD
(pF)
tf
(ns)
tr
(ns)
2.1
– 0.4
1.5
0.8
2.0
0.45
2.4
100
<10
<10
VZ is the measured value used to detect high impedance.
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