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參數(shù)資料
| 型號： | TMS28F010B-90 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 131072 BY 8-BIT FLASH MEMORY |
| 中文描述： | 131072 8位快閃記憶體 |
| 文件頁數(shù)： | 13/23頁 |
| 文件大?。?/td> | 332K |
| 代理商： | TMS28F010B-90 |
TMS28F010B
131072 BY 8-BIT
FLASH MEMORY
SMJS824B – MAY 1995 – REVISED AUGUST 1997
13
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
(see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage range, V
PP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range (see Note 2): All inputs except A9
A9
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range (see Note 3)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range during read/erase/program, T
A
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values are with respect to VSS.
2. The voltage on any input pin can undershoot to –2 V for periods less than 20 ns.
3. The voltage on any output pin can overshoot to 7 V for periods less than 20 ns.
–0.6 V to 7 V
–0.6 V to 14 V
–0.6 V to V
CC
+ 1 V
–0.6 V to 13.5 V
–0.6 V to V
CC
+ 1 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
0
°
C to 70
°
C
– 40
°
C to 85
°
C
– 40
°
C to 125
°
C
–65
°
C to 150
°
C
recommended operating conditions
MIN
TYP
MAX
UNIT
VCC
Supply voltage
During write/read/flash erase
4.5
5
5.5
V
VPP
Supply voltage
During read only (VPPL)
During write/read/flash erase (VPPH)
0
VCC + 2
12.6
V
11.4
12
V
VIH
High level dc input voltage
High-level dc input voltage
TTL
2
VCC+0.5
VCC+0.5
0.8
V
CMOS
VCC– 0.5
–0.5
VIL
Low level dc input voltage
Low-level dc input voltage
TTL
V
CMOS
GND – 0.2
GND+0.2
VID
Voltage level on A9 for algorithm-selection mode
11.5
13
V
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