參數(shù)資料
型號(hào): TMS28F010A-10C4DUL4
廠商: Texas Instruments, Inc.
英文描述: 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
中文描述: 1048576位閃存電可擦除可編程只讀存儲(chǔ)器
文件頁(yè)數(shù): 20/22頁(yè)
文件大?。?/td> 328K
代理商: TMS28F010A-10C4DUL4
TMS28F010A
1048576-BIT FLASH
ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
SMJS012 – DECEMBER 1992 – REVISED NOVEMBER 1993
20
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Power Up
and
Standby
Set-Up-
Program
Command
Program
Command
Latch
Address
and Data Programming
Program
Verify
Command
Program
Verification
Standby/
Power Down
A0–A16
W
G
E
DQ0–DQ7
tc(W)
tsu(A)
tdis(G)
tdis(E)
th(D)
td(E)
ta(E)
tsu(VPPEL)
Data In = 40h
Data In
Data In = C0h
Valid Data Out
tsu(W)
th(EA)
th(W)
th(W)
th(ED)
5 V
VCC
0 V
VPPH
VPP
VPPL
tr(VPP)
tsu(EHVPP)
tf(VPP)
th(W)
tsu(A)
th(EA)
tw(E)
tsu(D)
tw(E)
th(ED)
tsu(D)
trec(E)W
tw(E)
tsu(D)
HI-Z
tc(W)
tc(W)
tc(R)
tsu(W)
tsu(W)
td(G)
ten(G)
tw(EH)
tc(w)B
trec(E)R
th(ED)
Figure 7. Write Cycle (Alternative E-Controlled Writes) Timing
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