參數(shù)資料
型號(hào)： TMS28F002AXY
廠商： Texas Instruments, Inc.
英文描述： 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述： 262144按8-BIT/131072由16位自動(dòng)選擇啟動(dòng)塊閃存
文件頁(yè)數(shù)： 11/79頁(yè)
文件大?。?/td> 1064K
代理商： TMS28F002AXY
TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
11
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
status register (continued)
Table 5. Status-Register Bit Definitions and Functions
STATUS
BIT
FUNCTION
DATA
COMMENTS
SB7
Write-state-machine status
(WSMS)
1= Ready
0= Busy
If SB7 = 0 (busy), the WSM has not completed an erase or
programming operation. If SB7 = 1 (ready), other polling
operations can be performed. Until this occurs, the other status
bits are not valid If the WSM status bit shows busy (0) the user
bits are not valid. If the WSM status bit shows busy (0), the user
must toggle E or G periodically to determine when the WSM has
completed an operation (SB7 = 1) since SB7 is not automatically
updated at the completion of a WSM task.
SB6
Erase-suspend status
(ESS)
1= Erase suspended
0= Erase in progress or
completed
When an erase-suspend command is issued, the WSM halts
execution and sets the ESS bit high (SB6 = 1), indicating that the
erase operation has been suspended. The WSM status bit also
is set high (SB7 = 1), indicating that the erase-suspend operation
has been completed successfully. The ESS bit remains at a
logic-high level until an erase-resume command is input to the
CSM (code D0h).
SB5
Erase status
(ES)
1= Block-erase error
0= Block-erase good
SB5 = 0 indicates that a successful block-erasure has occurred.
SB5 = 1 indicates that an erase error has occurred. In this case,
the WSM has completed the maximum allowed erase pulses
determined by the internal algorithm, but this was insufficient to
completely erase the device.
SB4
Program status
(PS)
1= Byte/word-program error
0= Byte/word-program good
SB4 = 0 indicates successful programming has occurred at the
addressed block location. SB4 = 1 indicates that the WSM was
unable to program the addressed block location correctly.
SB3
VPP status
(VPPS)
1= Program abort:
VPP range error
0= VPP good
SB3 provides information on the status of VPP during
programming. If VPP is lower than VPPL after a program or erase
command has been issued, SB3 is set to a 1, indicating that the
programming operation is aborted. If VPP is between VPPH and
VPPL, SB3 is not set.
SB2–
SB0
Reserved
SB2–SB0 are masked out when reading the status register.
byte-wide or word-wide mode selection
The memory array is divided into two parts: an upper-half that outputs data through I/O pins DQ8–DQ15, and
a lower-half that outputs data through DQ0–DQ7. Device operation in either byte-wide or word-wide mode is
user-selectable and is determined by the logic state of BYTE. When BYTE is at a logic-high level, the device
is in the word-wide mode and data is written to or read from I/O pins DQ0–DQ15. When BYTE is at a logic-low
level, the device is in the byte-wide mode and data is written to or read from I/O pins DQ0–DQ7. In the byte-wide
mode, I/O pins DQ8–DQ14 are placed in the high-impedance state and DQ15/A
–1
becomes the low-order
address pin and selects either the upper- or lower-half of the array. Array data from the upper half (DQ8–DQ15)
and the lower half (DQ0–DQ7) are multiplexed to appear on DQ0–DQ7. Table 6, Table 7, and Table 8
summarize operation modes.
相關(guān)PDF資料
PDF描述
TMS28F004AEB60BDBJL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS28F004AEB60CDBJL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
TMS28F004AEB70BDBJL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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