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參數資料
| 型號： | TMS27C010A-15 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Programmable Read-Only Memory(128K×8結構,可擦可編程只讀存儲器) |
| 中文描述： | 可編程只讀存儲器（128K的× 8結構，可擦可編程只讀存儲器） |
| 文件頁數： | 10/13頁 |
| 文件大小： | 269K |
| 代理商： | TMS27C010A-15 |
TMS27C010A 1048576-BIT UV ERASABLE PROGRAMMABLE
TMS27PC010A 1048576-BIT PROGRAMMABLE
READ-ONLY MEMORY
SMLS110B – NOVEMBER 1990 – REVISED JUNE 1995
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
switching characteristics for programming: V
CC
= 6.5 V and V
PP
= 13 V (SNAP! Pulse), T
A
= 25
°
C
(see Note 4)
PARAMETER
MIN
MAX
UNIT
tdis(G)
ten(G)
Disable time, output disable time from G
0
130
ns
Enable time, output enable time from G
150
ns
recommended timing requirements for programming: V
CC
= 6.5 V and V
PP
= 13 V (SNAP! Pulse),
T
A
= 25
°
C, (see Note 4)
MIN
TYP
MAX
UNIT
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
tw(PGM)
tsu(A)
tsu(E)
tsu(G)
tsu(D)
tsu(VPP)
tsu(VCC)
th(A)
th(D)
NOTE 4: For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
0.8 V for logic low (reference AC testing waveform).
Pulse duration, program
SNAP! Pulse programming algorithm
95
100
105
Setup time, address
2
Setup time, E
2
Setup time, G
2
Setup time, data
2
Setup time, VPP
Setup time, VCC
Hold time, address
2
2
0
Hold time, data
2
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