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參數(shù)資料
| 型號： | TM248NBK36B-60 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CAP 68PF 100V CERAMIC MONO 5% |
| 中文描述： | 動態(tài)隨機(jī)存儲器模塊 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大?。?/td> | 156K |
| 代理商： | TM248NBK36B-60 |
TM124MBK36B, TM124MBK36R 1048576 BY 36-BIT
TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT
DYNAMIC RAMMODULE
SMMS137E – JANUARY 1991 – REVISEDJUNE 1995
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements over recommended ranges of supply voltage and operating free-air
temperature (continued)
’124MBK36B-60
’248NBK36B-60
’124MBK36B-70
’248NBK36B-70
’124MBK36B-80
’248NBK36B-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tCAH
tDHR
tDH
tAR
tCLCH
tRAH
tRCH
tRRH
tWCH
tWCR
tWHR
tCHR
tCRP
tCSH
tCSR
tRAD
tRAL
tCAL
tRCD
tRPC
tRSH
tREF
tT
NOTES:
Hold time, column address after CAS low
10
15
15
ns
Hold time, data after RAS low (see Note 10)
50
55
60
ns
Hold time, data
10
15
15
ns
Hold time, column address after RAS low (see Note 10)
50
55
60
ns
Hold time, CAS low to CAS high
5
5
5
ns
Hold time, row address after RAS low
10
10
10
ns
Hold time, read after CAS high (see Note 11)
0
0
0
ns
Hold time, read after RAS high (see Note 11)
0
0
0
ns
Hold time, write after CAS low
15
15
15
ns
Hold time, write after RAS low (see Note 10)
50
55
60
ns
Hold time, W high (see Note 9)
10
10
10
ns
Delay time, RAS low to CAS high (see Note 9)
15
15
20
ns
Delay time, CAS high to RAS low
0
0
0
ns
Delay time, RAS low to CAS high
60
70
80
ns
Delay time, CAS low to RAS low (see Note 9)
10
10
10
ns
Delay time, RAS low to column address (see Note 12)
15
30
15
35
15
40
ns
Delay time, column address to RAS high
30
35
40
ns
Delay time, column address to CAS high
30
35
40
ns
Delay time, RAS low to CAS low (see Note 12)
20
45
20
52
20
60
ns
Delay time, RAS high to CAS low (see Note 9)
0
0
0
ns
Delay time, CAS low to RAS high
15
18
20
ns
Refresh time interval
16
16
16
ms
Transition time
2
50
2
50
2
50
ns
9. CBR refresh only
10. The minimum value is measured when tRCD is set to tRCD min as a reference.
11. Either tRRH or tRCH must be satisfied for a read cycle.
12. The maximum value is specified only to assure access time.
device symbolization (TM124MBK36B illustrated)
TM124MBK36B
–SS
YYMMT
YY =
MM =
T =
–SS =
Year Code
Month Code
Assembly Site Code
Speed Code
NOTE: Location of symbolization may vary.
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| TM124MBK36B-80 | DYNAMIC RAM MODULE |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TM248NBK36B-70 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE |
| TM248NBK36B-80 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE |
| TM248NBK36E | 制造商:TI 制造商全稱:Texas Instruments 功能描述:36-BIT DYNAMIC RAM MODULE |
| TM248NBK36R | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DYNAMIC RAM MODULE |
| TM248NBK36R-80 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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