參數(shù)資料
型號: TLE6280
廠商: INFINEON TECHNOLOGIES AG
英文描述: 3-Phase Bridge Driver IC
中文描述: 三相橋驅(qū)動器集成電路
文件頁數(shù): 9/24頁
文件大?。?/td> 821K
代理商: TLE6280
Datasheet TLE6280GP
The power dissipation within the driver IC is strongly dependent upon the use of the driver
and the external components. Nevertheless, a rough estimation of the worst case power dis-
sipation is possible.
Worst case calculation is:
P
D
= (Q
gate
*n*const* f
PWM
+ I
VS(open)
) * V
Vs
- P
RGate
With:
P
D
= Power dissipation in the driver IC
f
PWM
= Switching frequency
Q
gate
= Total gate charge of used MOSFET at 10V V
GS
n
= number of switched Mosfets
const
= constant considering some leakage current in the driver and the power dissipa-
tion caused by the charge pump (nominally = 2)
I
VS(open)
= Current consumption of driver without connected Mosfets during switching
V
VS
= Voltage at Vs
P
RGate
= Power dissipation in the external gate resistors
This value can be reduced dramatically by the use of external gate resistors.
Recommended start up procedure
To assure the driver to be active and functional, a special initialization procedure is required
whenever the gate drive is enabled (V
MFP
is changed from LO to HI). Every time the driver is
enabled, after 10
μ
s or later, positive-going transition signals at all ILx pins are required in or-
der to ensure proper start-up of the output driver. This procedure assures a proper wake up
the device and allowes to fill the bootstrap capacitors. Not filling the bootstrap capacitors
might lead to low Gate-Source voltages mainly in highside and can cause a short circuit de-
tection when the highside switches are activated. Not changing the ILx input signal after
enabling the device may cause the lowside outputs to stay in off conditions.
9
2004-03-31
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