參數(shù)資料
型號(hào): TLE6280
廠商: INFINEON TECHNOLOGIES AG
英文描述: 3-Phase Bridge Driver IC
中文描述: 三相橋驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù): 13/24頁(yè)
文件大?。?/td> 821K
代理商: TLE6280
Datasheet TLE6280GP
Electrical Characteristics
(continued)
Parameter and Conditions
at
T
j
= –40 … +150 °C, unless otherwise specified
and supply voltage range
V
S
= 8 ... 20V; f
PWM
= 20kHz
Symbol
Values
typ
Unit
min
max
Dynamic characteristics
(continued)
Disable propagation time
Wake up time after enabling the device
Input propagation time (low on)
Input propagation time (low off)
Input propagation time (high on)
Input propagation time (high off)
Input propagation time difference
(all channels turn on)
Input propagation time difference
(all channels turn off)
Input propagation time difference
(one channel; high off – low on)
Input propagation time difference
(one channel; low off – high on)
Input propagation time difference
(all channels; high off – low on)
Input propagation time difference
(all channels; low off – high on)
DC-Resistance between CH and Bxx pin
I
CH-Bxx
= 50mA;
V
VS
=
V
Bxx
= GND = 0V
@
T
J
= -40°C
@
T
J
= +25°C
@
T
J
= +150°C
Boostrap diode forward voltage
I
CH-Bxx
= 50mA
@
T
J
= -40°C
@
T
J
= +25°C
@
T
J
= +150°C
t
P(DIS)
t
WU
t
P(ILN)
t
P(ILF)
t
P(IHN)
t
P(IHF)
t
PD(an)
--
350
700
10
500
500
500
500
70
ns
μs
ns
ns
ns
ns
ns
--
--
--
--
20
220
180
250
185
55
t
PD(af)
--
11
50
ns
t
PD(1hfln)
--
60
150
ns
t
PD(1lfhn)
--
80
150
ns
t
PD(ahfln)
--
60
150
ns
t
PD(alfhn)
--
80
150
ns
R
CH-Bxx
--
3.3
4.2
6.0
6.3
7.3
8.3
V
BSD
--
0.84
0.73
0.52
1.2
1.0
0.76
V
13
2004-03-31
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