參數(shù)資料
型號(hào)： TLE5226G
廠商： SIEMENS A G
元件分類： 外設(shè)及接口
英文描述： Smart Quad Channel Low-Side Switch
中文描述： 5 A BUF OR INV BASED PRPHL DRVR, PDSO20
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 196K
代理商： TLE5226G
TLE 5226 G
Semiconductor Group
Page
1998-02-04
5
Electrical Characteristics
Parameter and Conditions
V
S
= 4.8 to 18 V ; T
j
= - 40 °C to + 150 °C
(unless otherwise specified)
Symbol
Values
min
Unit
typ
max
1. Power Supply (V
S
)
Supply current (Outputs ON)
Supply current (Outputs OFF)
V
ENA
= L, V
STBY
= H
Operating voltage
Standby current
I
S
I
S
8
4
mA
mA
V
S
I
S
4.8
32
10
V
V
STBY
= L
μA
2. Power Outputs
ON state resistance Channel 1,2
I
D
= 1A; V
S
≥
9.5 V
ON state resistance Channel 3,4
I
D
= 1A; V
S
≥
9.5 V
Z-Diode clamping voltage (OUT1...4)
Pull down resistor
V
STBY
= H, V
IN
= L T
j
= -40 °C ...150°C
Output leakage current
Output on delay time
2
Output off delay time
2
Output on fall time
2
Output off rise time
2
Output off status delay time
2
Output on status delay time
3
Overload switch-off delay time
T
j
= 25
°
C
T
j
= 125°C
1
T
j
= 25
°
C
T
j
= 125°C
1
I
D
≥
100 mA
T
j
= 25
°
C
R
DS(ON)
0.2
0.5
R
DS(ON)
0.35
0.75
60
26
40
20
65
80
40
40
60
50
300
V
DS(AZ)
R
PD
45
14
10
V
20
k
V
STBY
= L
I
D
= 1 A
I
D
= 1 A
I
D
= 1 A
I
D
= 1 A
I
D
= 1 A
I
Dlk
t
on
t
off
t
fall
t
rise
t
4
t
5
t
DSO
μA
μs
10
5
5
10
50
100
3. Digital Inputs (IN1, IN2, IN3, IN4, ENA)
Input low voltage
Input high voltage
Input voltage hysteresis
3
Input pull down current
Enable pull down current V
ENA
= 5 V; V
S
≥
6.5 V
V
INL
V
INH
V
INHys
I
IN
I
ENA
- 0.3
2.0
50
10
10
1.0
6.0
V
V
100
30
20
mV
μA
μA
V
IN
= 5 V; V
S
≥
6.5 V
60
40
4. Digital Status Outputs (ST1 - ST4) open Drain
Output voltage low
Leakage current high
I
ST
= 2 mA
V
STL
I
STH
0.5
10
V
μA
1
Measured on P-DSO-20 devices
2
See timing diagram, resitive load condition; V
S
≥
9 V
3
This parameter will not be tested but assured by design
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