參數(shù)資料
型號: TLC2801Z
廠商: Texas Instruments, Inc.
英文描述: Advanced LinCMOSE⑩ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
中文描述: 高級LinCMOSE⑩低噪聲高精度運算放大器
文件頁數(shù): 8/13頁
文件大?。?/td> 192K
代理商: TLC2801Z
TLC2801Z, TLC2801Y
Advanced LinCMOS
LOW-NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS116B – JULY 1982 – REVISED SEPTEMBER 1996
3–8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
2 k
VDD–
20
VO
20
+
10 k
VDD+
VDD–
VO
100
+
VI
CL
RL
(see Note A)
NOTE A: CL includes fixture capacitance.
Figure 2. Phase-Margin Test Circuit
VDD+
Figure 1. Noise-Voltage Test Circuit
VDD+
VDD–
VO
+
CL
RL
(see Note A)
VI
VDD+
VDD–
VO
+
NOTE A: CL includes fixture capacitance.
Figure 3. Slew-Rate Test Circuit
Ground shield
Picoammeters
Figure 4. Input-Bias and Offset-
Current Test Circuit
typical values
Typical values as presented in this data sheet represents the median (50% point) of device parametric
performance.
input bias and offset current
At the picoamp bias-current level typical of the TLC2801, accurate measurement of the bias current becomes
difficult. Not only does this measurement require a picoammeter, but test socket leakages can easily exceed
the actual device bias currents. To measure these small currents, Texas Instruments uses a two-step process.
The socket leakage is measured using picoammeters with bias voltage applied but with no device in the socket.
The device is then inserted in the socket and a second test measuring both the socket leakage and the device
input bias current is performed. The two measurements are then subtracted algebraically to determine the bias
current of the device.
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